mrf7s19080h Freescale Semiconductor, Inc, mrf7s19080h Datasheet - Page 7

• Manufacturer Part Number: mrf7s19080h
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
−10
−20
−30
−40
−50
−60
−70
−70
−20
−30
−40
−50
−60
34
1
Figure 10. Digital Predistortion Correction versus
Figure 7. Intermodulation Distortion Products
V
f1 = 1955 MHz, f2 = 1965 MHz
Two −Tone Measurements, 10 MHz Tone Spacing
V
Single −Carrier W−CDMA, PAR = 7.5 dB, ACPR @
5 MHz Offset in 3.84 MHz Integrated Bandwidth
DD
DD
35
= 28 Vdc, I
= 28 Vdc, I
DPD Corrected
No Memory Correction
36
P
out
DQ
DQ
ACPR and Output Power
, OUTPUT POWER (WATTS) PEP
versus Output Power
P
37
= 750 mA
out
= 750 mA, f = 1960 MHz
, OUTPUT POWER (dBm)
38
DPD Corrected, with Memory Correction
Uncorrected, Upper and Lower
10
3rd Order
7th Order
39
−1
−2
−3
−4
−5
1
0
10
40
Compression (PARC) versus Output Power
−1 dB = 23 W
Figure 9. Output Peak - to - Average Ratio
41
TYPICAL CHARACTERISTICS
−2 dB = 32.2 W
5th Order
20
42
100
P
out
43
, OUTPUT POWER (WATTS)
400
30
44
V
f = 1960 MHz, Input PAR = 7.5 dB
DD
−3 dB = 52.4 W
= 28 Vdc, I
20
19
18
17
16
15
14
40
0.1
−10
−20
−30
−40
−50
−60
Figure 11. Power Gain and Drain Efficiency
0
η
1
G
D
DQ
Figure 8. Intermodulation Distortion Products
ps
V
Two −Tone Measurements
(f1 + f2)/2 = Center Frequency of 1960 MHz
DD
= 750 mA
= 28 Vdc, P
50
1
P
versus CW Output Power
out
Actual
, OUTPUT POWER (WATTS) CW
Ideal
IM7 −U
out
T
IM7 −L
versus Tone Spacing
TWO −TONE SPACING (MHz)
MRF7S19080HR3 MRF7S19080HSR3
C
60
= 80 W (PEP), I
= −30_C
60
55
50
45
40
35
30
85_C
25_C
IM5 −U
IM5 −L
10
10
V
I
f = 1960 MHz
DQ
DD
DQ
IM3 −U
IM3 −L
= 750 mA
= 28 Vdc
= 750 mA
−30_C
100
25_C
85_C
300
66
55
44
33
22
11
0
100
7