mrf21125r3 Freescale Semiconductor, Inc, mrf21125r3 Datasheet - Page 2

• Manufacturer Part Number: mrf21125r3
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

2
MRF21125R3 MRF21125SR3
Table 3. ESD Protection Characteristics
Table 4. Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Functional Tests (In Freescale Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth, IM3 measured
in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% probability on CCDF.
1. Part internally matched both on input and output.
Human Body Model
Machine Model
Drain- Source Breakdown Voltage
Gate- Source Leakage Current
Zero Gate Voltage Drain Leakage Current
Forward Transconductance
Gate Threshold Voltage
Gate Quiescent Voltage
Drain- Source On - Voltage
Reverse Transfer Capacitance
Common- Source Amplifier Power Gain
Drain Efficiency
Third Order Intermodulation Distortion
Adjacent Channel Power Ratio
Input Return Loss
(V
(V
(V
(V
(V
(V
(V
(V
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; IM3 measured at f1 - 10 MHz and f2 +10 MHz referenced to
carrier channel power.)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz; ACPR measured at f1 - 5 MHz and f2 +5 MHz referenced to
carrier channel power.)
(V
f1 = 2112.5 MHz, f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5
MHz)
GS
GS
DS
DS
DS
DS
GS
DS
DD
DD
DD
DD
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 0 Vdc, I
= 5 Vdc, V
= 28 Vdc, V
= 10 Vdc, I
= 10 V, I
= 28 V, I
= 10 V, I
= 28 Vdc, V
D
D
D
D
= 300 μA)
= 1300 mA)
= 1 A)
DS
D
out
out
out
out
out
= 100 μAdc)
GS
GS
= 3 Adc)
= 0 Vdc)
= 20 W Avg, 2-carrier W-CDMA, I
= 20 W Avg, 2-carrier W-CDMA, I
= 20 W Avg, 2-carrier W-CDMA, I
= 20 W Avg, 2-carrier W-CDMA, I
= 20 W Avg, 2-carrier W-CDMA, I
= 0 Vdc)
= 0, f = 1 MHz)
Characteristic
(1)
Test Conditions
(T
C
= 25°C unless otherwise noted)
DQ
DQ
DQ
DQ
DQ
= 1600 mA,
= 1600 mA,
= 1600 mA,
= 1600 mA,
= 1600 mA,
V
Symbol
V
V
V
(BR)DSS
ACPR
I
I
DS(on)
C
GS(th)
GS(Q)
G
IM3
GSS
IRL
DSS
g
η
rss
fs
ps
Min
2.5
65
—
—
—
—
—
12
17
—
—
—
2
10.8
0.12
Typ
- 43
- 45
- 12
3.9
5.4
13
18
—
—
—
—
M3 (Minimum)
2 (Minimum)
Class
Freescale Semiconductor
Max
- 9.0
4.5
- 40
- 40
10
—
—
—
—
—
—
1
4
RF Device Data
(continued)
μAdc
μAdc
Unit
Vdc
Vdc
Vdc
Vdc
dBc
dBc
dB
dB
pF
%
S