mrf21125r3 Freescale Semiconductor, Inc, mrf21125r3 Datasheet - Page 6

• Manufacturer Part Number: mrf21125r3
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

−100
−110
−120
176
160
144
128
−25
−30
−35
−40
−45
−50
−55
−60
6
112
MRF21125R3 MRF21125SR3
−30
−40
−50
−60
−70
−80
−90
−20
96
80
32
16
64
48
0
0
1
V
f1 = 2112.5 MHz, f2 = 2122.5 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
V
I
f = 2120 MHz
Figure 7. Intermodulation Distortion versus
DQ
DD
DD
−IM3 in
3.84 MHz BW
Figure 3. 2 - Carrier (10 MHz Spacing)
= 1600 mA
= 28 Vdc
= 28 Vdc
2
P
Figure 5. CW Performance
out
4
1300 mA
, OUTPUT POWER (WATTS) PEP
P
W - CDMA Spectrum
in
−ACPR in
3.84 MHz BW
P
, INPUT POWER (WATTS)
f, FREQUENCY (MHz)
out
Output Power
6
1600 mA
10
3.84 MHz
Channel BW
2000 mA
G
ps
8
P1dB = 135 W
η
+ACPR in
3.84 MHz BW
1000 mA
10
12
P3dB = 156 W
+IM3 in
3.84 MHz BW
100
TYPICAL CHARACTERISTICS
14
16
50
46
42
38
34
30
26
22
18
14
10
6
40
35
30
25
20
15
10
5
0
−10
30
25
20
15
10
−5
2080
14
13
12
10
11
5
0
V
P
I
Two−Tone Measurement, 10 MHz Tone Spacing
1
DQ
V
Channel Spacing (Channel Bandwidth): 10 MHz @ 3.84 MHz BW
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
DD
out
DD
Figure 6. Broadband Linearity Performance
V
f1 = 2112.5 MHz, f2 = 2122.5 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
4
= 1600 mA
Figure 8. Power Gain versus Output Power
= 125 W (PEP)
DD
Figure 4. 2 - Carrier W - CDMA ACPR, IM3,
= 28 Vdc
Power Gain and Drain Efficiency versus
= 28 Vdc, I
2100
G
P
= 28 Vdc
ps
out
, OUTPUT POWER (WATTS, AVG. (W−CDMA))
8
2000 mA
1600 mA
1300 mA
1000 mA
P
out
DQ
2120
, OUTPUT POWER (WATTS) PEP
f, FREQUENCY (MHz)
= 1600 mA, f1 = 2112.5 MHz, f2 = 2122.5 MHz
12
η
IMD
Output Power
IRL
ACPR
IM3
10
16
2140
20
Freescale Semiconductor
2160
η
24
2180
RF Device Data
100
28
G
ps
32
2200
0
−5
−10
−15
−20
−25
−30
−35
−40
−20
−25
−30
−35
−40
−45
−50
−55
−60