mrf21125r3 Freescale Semiconductor, Inc, mrf21125r3 Datasheet - Page 3

• Manufacturer Part Number: mrf21125r3
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
Table 4. Electrical Characteristics
Typical Two - Tone Performance (In Freescale Test Fixture)
Typical CW Performance
Common- Source Amplifier Power Gain
Drain Efficiency
Intermodulation Distortion
Common- Source Amplifier Power Gain
Drain Efficiency
(V
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
f2 = 2120 MHz and f1 = 2160 MHz, f2 = 2170 MHz)
(V
(V
DD
DD
DD
DD
DD
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
= 28 Vdc, P
out
out
out
out
out
= 125 W PEP, I
= 125 W PEP, I
= 125 W PEP, I
= 125 W CW, I
= 125 W CW, I
Characteristic
DQ
DQ
DQ
DQ
DQ
(T
= 1600 mA, f1 = 2170.0 MHz)
= 1600 mA, f = 2170.0 MHz)
C
= 1600 mA, f1 = 2110 MHz,
= 1600 mA, f1 = 2110 MHz,
= 1600 mA, f1 = 2110 MHz,
= 25°C unless otherwise noted)
(continued)
Symbol
IMD
G
G
η
η
ps
ps
Min
—
—
—
—
—
11.5
Typ
- 30
12
34
46
MRF21125R3 MRF21125SR3
Max
—
—
—
—
—
Unit
dBc
dB
dB
%
%
3