irfr220-01 NXP Semiconductors, irfr220-01 Datasheet
irfr220-01
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irfr220-01 Summary of contents
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... N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance Surface mount package. 3. Applications Switched mode power supplies converters ...
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... V; Figure 2 and 100 Figure 2 and Figure Rev. 01 — 14 August 2001 IRFR220 Typ Max Unit 200 V 4 150 C 0.7 0.8 Min Max Unit 200 V 200 4 3.0 ...
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... der Fig 2. Normalized continuous drain current as a function of mounting base temperature. R DSon = Rev. 01 — 14 August 2001 IRFR220 100 125 150 ------------------- 100 003aaa129 ...
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... Conditions mounted on a metal clad substrate th(j-mb) (K/W) = 0.5 1 0.2 0.1 0.05 0.02 single pulse pulse duration. Rev. 01 — 14 August 2001 IRFR220 Value Unit Figure 4 3 K/W 003aaa131 (s) © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... 100 4 Figure 4 /dt = 100 Rev. 01 — 14 August 2001 IRFR220 Min Typ Max Unit 200 250 A 10 100 nA 0.7 0.8 1.9 1.7 S Figure ...
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... VGS ( 5.5 2 1.8 1.0 0 (A) Fig 8. Normalized drain source on-state resistance factor as a function of junction temperature. Rev. 01 — 14 August 2001 IRFR220 003aaa133 > DSon 150 ( ...
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... Fig 10. Sub-threshold drain current as a function of gate-source voltage (pF (V) Rev. 01 — 14 August 2001 IRFR220 03aa35 min typ max ( 003aaa135 C iss C oss C rss 10 2 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. ...
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... N-channel enhancement mode field effect transistor 003aaa136 ( 0 Fig 13. Gate-source voltage as a function of gate charge; typical values. Rev. 01 — 14 August 2001 IRFR220 003aaa137 (nC) = 160 V © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... max. max. min. max. 5.36 0.4 6.22 6.73 4.81 2.285 4.57 4.0 5.26 0.2 5.98 6.47 4.45 REFERENCES JEDEC EIAJ TO-252 SC-63 Rev. 01 — 14 August 2001 IRFR220 max. min. 10.4 2.95 0.7 0.5 0.2 9.6 2.55 0.5 EUROPEAN ISSUE DATE PROJECTION 98-04-07 99-09-13 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. SOT428 y max. ...
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... Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010814 - Product data; initial version 9397 750 08519 Product data N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 IRFR220 © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Rev. 01 — 14 August 2001 Rev. 01 — 14 August 2001 IRFR220 IRFR220 Fax: + 24825 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. © Koninklijke Philips Electronics N.V. 2001. All rights reserved ...
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... Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 14 August 2001 Document order number: 9397 750 08519 N-channel enhancement mode field effect transistor IRFR220 ...