IRFR220,118 NXP Semiconductors, IRFR220,118 Datasheet

MOSFET N-CH 200V 4.8A SOT428

IRFR220,118

Manufacturer Part Number
IRFR220,118
Description
MOSFET N-CH 200V 4.8A SOT428
Manufacturer
NXP Semiconductors
Series
TrenchMOS™r
Datasheet
1.IRFR220118.pdf (12 pages)

Specifications of IRFR220,118

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
800 mOhm @ 2.9A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
4.8A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
14nC @ 10V
Input Capacitance (ciss) @ Vds
280pF @ 25V
Power - Max
42W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934056819118
IRFR220 /T3
IRFR220 /T3
1. Description
2. Features
3. Applications
4. Pinning information
Table 1:
[1]
1.
Pin
1
2
3
mb
It is not possible to make connection to pin 2 of the SOT428 package.
TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Pinning - SOT428 (D-PAK), simplified outline and symbol
Description
gate (g)
drain (d)
source (s)
mounting base;
connected to drain (d)
M3D300
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™
Product availability:
IRFR220 in SOT428 (D-PAK).
IRFR220
N-channel enhancement mode field effect transistor
Rev. 01 — 14 August 2001
Fast switching
Low on-state resistance
Surface mount package.
Switched mode power supplies
DC to DC converters.
[1]
Simplified outline
1
technology.
SOT428 (D-PAK)
Top view
1
mb
2
MBK091
3
Symbol
MBB076
g
d
s
Product data

Related parts for IRFR220,118

Image
Part Number
Description
Manufacturer
Datasheet
Request R
irfr220-01
Part Number:
irfr220-01
Description:
Irfr220 N-channel Enhancement Mode Field Effect Transistor
Manufacturer:
NXP Semiconductors
Datasheet:
IRFR220-01.pdf (12 pages)
IRFR
Part Number:
IRFR
Description:
Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A)
Manufacturer:
IRF [International Rectifier]
Datasheet:
IRFR.pdf (10 pages)
IRFR/U220A
Part Number:
IRFR/U220A
Description:
Advanced Power MOSFET
Manufacturer:
FAIRCHILD [Fairchild Semiconductor]
Datasheet:
IRFRU220A.pdf (7 pages)
LPC2420_60
Part Number:
LPC2420_60
Description:
NXP Semiconductors designed the LPC2420/2460 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2420_60.pdf (86 pages)
LPC2458
Part Number:
LPC2458
Description:
NXP Semiconductors designed the LPC2458 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2458.pdf (80 pages)
LPC2468
Part Number:
LPC2468
Description:
NXP Semiconductors designed the LPC2468 microcontroller around a 16-bit/32-bitARM7TDMI-S CPU core with real-time debug interfaces that include both JTAG andembedded trace
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2468.pdf (85 pages)
LPC2470
Part Number:
LPC2470
Description:
NXP Semiconductors designed the LPC2470 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2470.pdf (91 pages)
LPC2478
Part Number:
LPC2478
Description:
NXP Semiconductors designed the LPC2478 microcontroller, powered by theARM7TDMI-S core, to be a highly integrated microcontroller for a wide range ofapplications that require advanced communications and high quality graphic displays
Manufacturer:
NXP Semiconductors
Datasheet:
LPC2478.pdf (93 pages)
XA-G30
Part Number:
XA-G30
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G30.pdf (36 pages)
XA-G37
Part Number:
XA-G37
Description:
The Philips Semiconductors XA (eXtended Architecture) family of 16-bit single-chip microcontrollers is powerful enough to easily handle the requirements of high performance embedded applications, yet inexpensive enough to compete in the market for hi
Manufacturer:
NXP Semiconductors
Datasheet:
XA-G37.pdf (37 pages)
XA-S3
Part Number:
XA-S3
Description:
The XA-S3 device is a member of Philips Semiconductors? XA(eXtended Architecture) family of high performance 16-bitsingle-chip microcontrollers
Manufacturer:
NXP Semiconductors
Datasheet:
XA-S3.pdf (52 pages)
LH75401_LH75411_N
Part Number:
LH75401_LH75411_N
Description:
The NXP BlueStreak LH75401/LH75411 family consists of two low-cost 16/32-bit System-on-Chip (SoC) devices
Manufacturer:
NXP Semiconductors
Datasheet:
LH75401_LH75411_N.pdf (63 pages)
LPC3130_3131
Part Number:
LPC3130_3131
Description:
The NXP LPC3130/3131 combine an 180 MHz ARM926EJ-S CPU core, high-speed USB2
Manufacturer:
NXP Semiconductors
Datasheet:
LPC3130_3131.pdf (68 pages)
LPC3141FET180
Part Number:
LPC3141FET180
Description:
The NXP LPC3141 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors
LPC3143FET180
Part Number:
LPC3143FET180
Description:
The NXP LPC3143 combine a 270 MHz ARM926EJ-S CPU core, High-speed USB 2
Manufacturer:
NXP Semiconductors

IRFR220,118 Summary of contents

Page 1

IRFR220 N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 M3D300 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ Product availability: IRFR220 in SOT428 (D-PAK). 2. Features Fast switching Low on-state resistance ...

Page 2

Philips Semiconductors 5. Quick reference data Table 2: Quick reference data Symbol Parameter V drain-source voltage (DC drain current (DC total power dissipation tot T junction temperature j R drain-source on-state resistance DSon 6. Limiting values ...

Page 3

Philips Semiconductors 120 P der (%) 100 100 P tot P = ---------------------- - 100% der P tot 25 C Fig 1. Normalized total power dissipation as a function of mounting ...

Page 4

Philips Semiconductors 7. Thermal characteristics Table 4: Thermal characteristics Symbol Parameter R thermal resistance from junction to mounting th(j-mb) base 7.1 Transient thermal impedance Fig 4. Transient thermal impedance from junction to mounting base as a function of 9397 750 ...

Page 5

Philips Semiconductors 8. Characteristics Table 5: Characteristics unless otherwise specified j Symbol Parameter Static characteristics V drain-source breakdown voltage (BR)DSS V gate-source threshold voltage GS(th) I drain-source leakage current DSS I gate-source leakage current GSS R ...

Page 6

Philips Semiconductors ( Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values 4.5 R DSon ( ...

Page 7

Philips Semiconductors 5 V GS(th) (V) 4 max 3 typ min - mA Fig 9. Gate-source threshold voltage as a function of junction temperature ...

Page 8

Philips Semiconductors ( 150 0.2 0.4 0 and 150 Fig 12. Source (diode forward) current ...

Page 9

Philips Semiconductors 9. Package outline Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads (one lead cropped DIMENSIONS (mm are the original dimensions ...

Page 10

Philips Semiconductors 10. Revision history Table 6: Revision history Rev Date CPCN Description 01 20010814 - Product data; initial version 9397 750 08519 Product data N-channel enhancement mode field effect transistor Rev. 01 — 14 August 2001 IRFR220 © Koninklijke ...

Page 11

Philips Semiconductors Philips Semiconductors 11. Data sheet status [1] [2] Data sheet status Product status Objective data Development Preliminary data Qualification Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] ...

Page 12

Philips Semiconductors Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 2 Features . . . ...

Related keywords