tc1101v Transcom, Inc., tc1101v Datasheet
tc1101v
Manufacturer Part Number
tc1101v
Description
Low Noise And Medium Power Gaas Fets
Manufacturer
Transcom, Inc.
Datasheet
1.TC1101V.pdf
(2 pages)
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
TC1101V
Manufacturer:
Eudyna
Quantity:
5 000
FEATURES
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DESCRIPTION
ELECTRICAL SPECIFICATIONS (T
Note: * For the tight control of the pinch-off voltage . TC1101V’s are divided into 3 groups:
TRANSCOM, INC.,
Web-Site:
Symbol
The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It
can be used in circuits up to 30 GHz and suitable for low noise and medium power amplifier application including
a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality.
All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.
(1)TC1101VP0710 : Vp = -0.7V to -1.0V (2) TC1101VP0811 : Vp = -0.8V to -1.1V
(3)TC1101VP0912 : Vp = -0.9V to -1.2V
In addition, the customers may specify their requirements.
BV
P
I
NF
G
g
V
R
G
DSS
1dB
DGO
m
L
P
th
a
Via holes for source grounding
Low Noise Figure: NF = 0.5 dB Typical at 12 GHz
High Associated Gain: Ga = 13 dB Typical at 12 GHz
High Dynamic Range: 1 dB Compression Power P
Breakdown Voltage: BV
Lg = 0.25 m, Wg = 160 m
All-Gold Metallization for High Reliability
Tight Vp ranges control
High RF input power handling capability
100 % DC Tested
www.transcominc.com.tw
Noise Figure at V
Associated Gain at V
Output Power at 1dB Gain Compression Point, f = 12GHz, V
Linear Power Gain, f = 12GHz, V
Saturated Drain -Source Current at V
Transconductance at V
Pinch-off Voltage at V
Drain-Gate Breakdown Voltage at I
Thermal Resistance
90 Dasoong 7
DS
= 2 V, I
Low Noise and Medium Power GaAs FETs
DS
DS
DGO
= 2 V, I
DS
th
= 2 V, I
Road, Tainan Science-Based Industrial Park, Hsin -She Shiang, Tainan County, Taiwan, R.O.C.
= 2 V, V
DS
= 10 mA, f = 12GHz
9 V
DS
D
DS
= 0.32 mA
= 10 mA, f = 12GHz
GS
= 6 V, I
Conditions
DGO
= 0 V
DS
A
= 2 V, V
=0.08 mA
=25 C)
Phone: 886-6-5050086
DS
= 25 mA
GS
= 0 V
-1
1/2
= 18.5 dBm at 12 GHz
DS
= 6 V, I
DS
= 25 mA
Fax: 886-6-5051602
PHOTO ENLARGEMENT
MIN
17.5
11
14
9
-1.0*
TYP
18.5
180
0.5
13
15
48
55
12
TC1101V
REV6_20070502
MAX
0.7
UNIT
Volts
Volts
dBm
C/W
mA
mS
dB
dB
dB
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tc1101v Summary of contents
Page 1
... DC Tested DESCRIPTION The TC1101V is the same as TC1101 expect via holes in the source pads for reducing the grounding inductance. It can be used in circuits GHz and suitable for low noise and medium power amplifier application including a wide range of commercial and military application. All devices are 100% DC tested to assure consistent quality. ...
Page 2
... C) TYPICAL NOISE PARAMETERS ( Frequency Rating (GHz DSS 6 160 dBm 10 150 mW 12 175 +175 250 Phone: 886-6-5050086 2/2 TC1101V REV6_20070502 = Ã opt A opt (dB) (dB) MAG ANG 0.34 21.2 0.97 14 0.36 19.3 0.83 30 0.38 17.5 0.68 50 0.42 15.9 0.51 75 0.48 14.4 0.38 106 0 ...