mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 30

• Manufacturer Part Number: mt46h16m16lf
• Description: 256mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 15:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
Command
Command
Address
Address
Consecutive READ Bursts
DQS
DQS
CK#
CK#
DQ
DQ
CK
CK
Notes:
READ
READ
Bank,
Bank,
Col n
Col n
T0
T0
1. D
2. BL = 4 or 8 (if 4, the bursts are concatenated; if 8, the second burst interrupts the first).
3. Shown with nominal
4. Example applies only when READ commands are issued to the same device.
OUT
CL = 2
n (or b) = data-out from column n (or column b).
NOP
NOP
T1
T1
CL = 3
T1n
t
AC,
D
READ
Bank,
READ
Bank,
Col b
Col b
OUT
n
T2
T2
t
DQSCK, and
30
D
n+1
T2n
T2n
OUT
D
D
OUT
n+2
n
NOP
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
T3
T3
OUT
t
256Mb: x16, x32 Mobile DDR SDRAM
DQSQ.
Transitioning data
D
n+1
D
T3n
T3n
n+3
OUT
OUT
D
n+2
D
T4
NOP
T4
NOP
OUT
OUT
b
D
n+3
T4n
T4n
D
OUT
b+1
OUT
©2005 Micron Technology, Inc. All rights reserved.
D
T5
NOP
T5
NOP
D
Don’t Care
b+2
OUT
b
OUT
D
T5n
T5n
b+1
b + 3
D
OUT
OUT
Operations