mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 65
mt46h16m16lf
Manufacturer Part Number
mt46h16m16lf
Description
256mb X16, X32 Mobile Ddr Sdram
Manufacturer
Micron Semiconductor Products
Datasheet
1.MT46H16M16LF.pdf
(79 pages)
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PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
35. Reduced page-size option (A12). See page 1.
36. Current may be slightly higher for up to 500ms when entering this operating mode.
37. The maximum
38. Deep power-down current is nominal value at 25°C. The parameter is not tested.
39. The values for I
40. At
41. This parameter is sampled. V
sampled only.
V
DM input is grouped with I/O pins, reflecting the fact that they are matched in load-
ing.
OUT
least
(DC) = V
one clock cycle is required during
DD
t
DD
REFI value applies to both A11 and A12 row size ordering options.
Q/2, V
6 85°C are 100 percent tested. Values for 70°C, 45°C, and 15°C are
OUT
65
(peak-to-peak) = 0.2V.
DD
/V
DD
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Q = 1.70–1.95V, f = 100 MHz, T
256Mb: x16, x32 Mobile DDR SDRAM
t
WR time when in auto-precharge mode.
©2005 Micron Technology, Inc. All rights reserved.
A
= 25°C,
Notes