mt46h16m16lf Micron Semiconductor Products, mt46h16m16lf Datasheet - Page 41

• Manufacturer Part Number: mt46h16m16lf
• Description: 256mb X16, X32 Mobile Ddr Sdram
• Manufacturer: Micron Semiconductor Products

Figure 26:
PDF: 09005aef82091978 / Source: 09005aef8209195b
MT46H16M16LF__2.fm - Rev. H 3/08 EN
Command
Address
t
t
t
DQSS (NOM)
DQSS (MIN)
DQSS (MAX)
DQS
DQS
DQS
CK#
DM
DM
DM
DQ
DQ
DQ
CK
WRITE-to-READ – Uninterrupting
Bank a,
WRITE
Notes:
Col b
T0
t
DQSS
t
DQSS
t
DQSS
1. D
2. An uninterrupted burst of 4 is shown.
3.
4. The READ and WRITE commands are to the same bank. However, the READ and WRITE com-
5. A10 is LOW with the WRITE command (auto precharge is disabled).
D
b
t
mands can be directed to different banks in which case
command could be applied earlier.
IN
WTR is referenced from the first positive CK edge after the last data-in pair.
IN
NOP
D
T1
b
b = data-in for column b; D
IN
b+1
D
D
b
IN
IN
T1n
b+1
D
IN
b+2
b+1
D
D
IN
IN
b+2
NOP
D
T2
IN
b+2
b+3
D
D
IN
IN
b+3
T2n
D
IN
b+3
D
41
IN
NOP
T3
OUT
t
WTR
n = data-out for column n.
Micron Technology, Inc., reserves the right to change products or specifications without notice.
256Mb: x16, x32 Mobile DDR SDRAM
Bank a,
READ
Col n
T4
Transitioning data
t
WTR is not required, and the READ
CL = 2
CL = 2
CL = 2
T5
NOP
©2005 Micron Technology, Inc. All rights reserved.
T5n
D
D
D
OUT
n
OUT
OUT
n
n
T6
NOP
Don’t Care
Operations
D
D
D
n+1
n+1
n+1
OUT
OUT
OUT
T6n