mt47h64m16hw-3 Micron Semiconductor Products, mt47h64m16hw-3 Datasheet

mt47h64m16hw-3

Manufacturer Part Number

mt47h64m16hw-3

Description

1gb X4, X8, X16 Ddr2 Sdram

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT47H64M16HW-3.pdf (125 pages)

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Download datasheet (5Mb)

DDR2 SDRAM

MT47H256M4 – 32 Meg x 4 x 8 banks

MT47H128M8 – 16 Meg x 8 x 8 banks

MT47H64M16 – 8 Meg x 16 x 8 banks

Features

• RoHS compliant

• V

• JEDEC-standard 1.8V I/O (SSTL_18-compatible)

• Differential data strobe (DQS, DQS#) option

• 4n-bit prefetch architecture

• Duplicate output strobe (RDQS) option for x8

• DLL to align DQ and DQS transitions with CK

• 8 internal banks for concurrent operation

• Programmable CAS latency (CL)

• Posted CAS additive latency (AL)

• WRITE latency = READ latency - 1

• Selectable burst lengths (BL): 4 or 8

• Adjustable data-output drive strength

• 64ms, 8,192-cycle refresh

• On-die termination (ODT)

• Industrial temperature (IT) option

• Supports JEDEC clock jitter specification

Table 1:

PDF: 09005aef821ae8bf/Source: 09005aef821aed36

1Gb_DDR2_x4x8x16_D1.fm - 1Gb DDR2: Rev. N; Core DDR2: Rev. C 4/08 EN

Speed Grade

-187E

= +1.8V ±0.1V, V

-25E

-37E

-25

-3E

-5E

-3

Key Timing Parameters

Products and specifications discussed herein are subject to change by Micron without notice.

CL = 3

400

n/a

Q = +1.8V ±0.1V

CL = 4

533

667

533

400

n/a

Data Rate (MT/s)

CL = 5

667

800

667

n/a

Notes: 1. Not recommended for new designs.

Options

• Configuration

• FBGA package (Pb-free)

• FBGA package (lead solder)

• Timing – cycle time

• Self refresh

• Operating temperature

• Revision

– 256 Meg x 4 (32 Meg x 4 x 8 banks)

– 128 Meg x 8 (16 Meg x 8 x 8 banks)

– 64 Meg x 16 (8 Meg x 16 x 8 banks)

– 92-ball FBGA (11mm x 19mm) Rev. A

– 84-ball FBGA (8mm x 12.5mm) Rev. E, G

– 60-ball FBGA (8mm x 11.5mm) Rev. E, G

– 84-ball FBGA (8mm x 12.5mm) Rev. E, G

– 60-ball FBGA (8mm x 11.5mm) Rev. E, G

– 1.875ns @ CL = 7 (DDR2-1066)

– 2.5ns @ CL = 5 (DDR2-800)

– 2.5ns @ CL = 6 (DDR2-800)

– 3.0ns @ CL = 4 (DDR2-667)

– 3.0ns @ CL = 5 (DDR2-667)

– 3.75ns @ CL = 4 (DDR2-533)

– 5.0ns @ CL = 3 (DDR2-400)

– Standard

– Low-power

– Commercial (0°C ≤ T

– Industrial (–40°C ≤ T

–40°C ≤ T

Micron Technology, Inc., reserves the right to change products or specifications without notice.

CL = 6

800

n/a

≤ 85°C)

1Gb: x4, x8, x16 DDR2 SDRAM

≤ 95°C;

≤ 85°C)

CL = 7

1066

n/a

Marking

Features

RC (ns)

256M4

128M8

64M16

-187E

-37E

None

-25E

-5E

-25

-3E

/:E/:G

-3

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