is42s16160a1-7t Integrated Silicon Solution, Inc., is42s16160a1-7t Datasheet
is42s16160a1-7t
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is42s16160a1-7t Summary of contents
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... IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) 256 Mb Synchronous DRAM DESCRIPTION IS42S83200A1 is a synchronous 256Mb SDRAM and is organized as 4-bank x 8,388,608-word x 8-bit; and IS42S16160A1 is organized as 4-bank x 4,194,304-word x 16-bit. All inputs and outputs are referenced to the rising edge of CLK. FEATURES ITEM tCLK Clock Cycle Time tRAS Active to Precharge Command Period (Min ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) PIN CONFIGURATION (TOP VIEW) Vdd DQ0 VddQ NC DQ1 VssQ NC DQ2 VddQ NC DQ3 VssQ NC Vdd NC /WE /CAS /RAS /CS BA0 BA1 A10/ Vdd CLK : Master Clock CKE : Clock Enable /CS : Chip Select ...
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... Memory Array 8192x1024x8 Cell Array Bank #0 Mode Register Address Buffer A0-12 BA0,1 Note:This figure shows the IS42S83200A1 The IS42S16160A1 configuration is 8192x512x16 of cell array and DQ0-15 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/05 DQ0-7 I/O Buffer Memory Array Memory Array 8192x1024x8 8192x1024x8 Cell Array ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) PIN FUNCTION CLK Input CKE Input /CS Input /RAS, /CAS, /WE Input A0-12 Input BA0,1 Input DQ0-7(x8), Input / Output DQ0-15(x16) DQM(x8), Input DQMU/L(x16) Vdd, Vss Power Supply VddQ, VssQ Power Supply 4 Master Clock: ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) BASIC FUNCTIONS The IS42S83200A1/16160A1 provides basic functions, bank (row) activate, burst read / write, bank (row) precharge, and auto / self refresh. Each command is defined by control signals of /RAS, CLK /CS /RAS /CAS /WE CKE A10 Activate (ACT) [/RAS =L, /CAS =/WE =H] ACT command activates a row in an idle bank indicated by BA ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) COMMAND TRUTH TABLE COMMAND MNEMONIC Deselect DESEL No Operation NOP Row Address Entry & ACT Bank Activate Single Bank Precharge PRE Precharge All Banks PREA Column Address Entry WRITE & Write Column Address Entry & ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) FUNCTION TRUTH TABLE Current State /CS /RAS /CAS IDLE ROW ACTIVE ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) FUNCTION TRUTH TABLE (continued) Current State /CS /RAS WRITE READ with AUTO L H PRECHARGE ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) FUNCTION TRUTH TABLE (continued) Current State /CS /RAS /CAS PRE - CHARGING ROW ACTIVATING ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) FUNCTION TRUTH TABLE (continued) Current State /CS /RAS RE FRESHING MODE L H REGISTER L L SETTING ABBREVIATIONS: H=High Level, L=Low Level, X=Don't Care ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) FUNCTION TRUTH TABLE (continued) CKE CKE Current State n SELF- REFRESH POWER L H DOWN ALL BANKS H L IDLE ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) SIMPLIFIED STATE DIAGRAM MODE REGISTER SET CLK SUSPEND CKEL WRITE WRITE SUSPEND CKEH WRITEA CKEL WRITEA WRITEA SUSPEND CKEH POWER APPLIED POWER ON 12 REFS REFSX MRS REFA IDLE CKEL CKEH ACT ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) POWER ON SEQUENCE Before starting normal operation, the following power on sequence is necessary to prevent a SDRAM from damaged or malfunctioning. 1. Apply power and start clock. Attempt to maintain CKE high, DQM high and NOP condition at the inputs ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) CLK Command Read Address Y DQ /CAS Latency CL= 3 BL= 4 Initial Address ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) OPERATIONAL DESCRIPTION BANK ACTIVATE The SDRAM has four independent banks. Each bank is activated by the ACT command with the bank ad- dresses (BA0,1). A row is indicated by the row ad- dresses A0-12. The minimum activation interval be- tween one bank and the other bank is tRRD.Multiple banks can be active state concurrently by issuing mul ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Multi Bank Interleaving Read (CL=2, BL=4) CLK Command ACT tRCD A0-9,11-12 Xa A10 Xa BA0 Read with Auto-Precharge (CL=2, BL=4) CLK Command ACT tRCD A0-9,11-12 Xa A10 Xa BA0 Auto-Precharge Timing (READ, BL=4) CLK Command ACT tRCD DQ CL=2 DQ CL=3 16 READ ACT ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) WRITE A WRITE command can be issued to any active bank. The start address is specified by A0-9(x8), A0-8(x16). 1st input data is set at the same cycle as the WRITE. The consecutive data length to be write is defined by the Burst Length. The address sequence of burst data is defined by Burst Type ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) BURST INTERRUPTION [ Read Interrupted by Read ] Burst read operation can be interrupted by new read of any bank. Random column access is allowed READ to READ interval is minimum 1 CLK.. Read interrupted by Read (CL=2, BL=4) CLK Command READ A0-9,11-12 Ya A10 0 BA0-1 ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [ Read Interrupted by Precharge ] Burst read operation can be interrupted by precharge of the same bank . READ to PRE interval is minimum 1 CLK. A PRE command to output disable latency is CLK Command DQ Command C L=2 DQ Command DQ Command DQ Command C L=3 DQ Command DQ Integrated Silicon Solution, Inc. — ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [Read Interrupted by Burst Terminate] Similarly to the precharge, a burst terminate command can interrupt the burst read operation and disable the data output. The terminated bank remains active. CLK Command DQ Command C L=2 DQ Command ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [ Write Interrupted by Write ] Burst write operation can be interrupted by new write of any bank. Random column access is allowed. WRITE to WRITE interval is minimum 1 CLK. CLK Command Write A0-9,11-12 Ya A10 0 BA0 Da0 Da1 [ Write Interrupted by Read ] Burst write operation can be interrupted by read of the same or the other bank ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [ Write Interrupted by Precharge ] Burst write operation can be interrupted by precharge of the same bank.Write recovery time(tWR) is required from the last data to PRE command. During write recovery, data inputs must be masked by DQM. CLK Command ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [Write with Auto-Precharge Interrupted by Write or Read to another Bank] Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after(BL+tWR-1+ tRP) from the WRITEA. Auto-precharge interruption by a command to the same bank is inhibited ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) [Read with Auto-Precharge Interrupted by Read to another Bank] Burst write with auto-precharge can be interrupted by write or read to another bank. Next ACT command can be issued after (BL+tRP) from the READA. Auto-precharge interruption by a command to the same bank is inhibited ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) AUTO REFRESH Single cycle of auto-refresh is initiated with a REFA (/CS= /RAS= /CAS= L, /WE= /CKE= H) command. The refresh address is generated internally. 8192 REFA cycles within 64ms refresh 256M bit memory cells. The auto-refresh is performed on 4 banks ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) SELF REFRESH Self-refresh mode is entered by issuing a REFS command (/CS= /RAS= /CAS= L, /WE= H, CKE= L). Once the self-refresh is initiated maintained as long as CKE is kept low. During the self-refresh mode, CKE is asynchronous and the only enabled input . ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) CLK SUSPEND CKE controls the internal CLK at the following cycle. Figure below shows how CKE works. By negating CKE, the next internal CLK is suspended. The purpose of CLK suspend is power down, output suspend or input ext ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) DQM CONTROL DQM is a dual function signal defined as the data mask for writes and the output disable for reads. During writes, DQM(U,L) masks input data word by word. DQM(U,L) CLK Command Write ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Vdd Supply Voltage Supply Voltage for Output VddQ VI Input Voltage VO Output Voltage IO Output Current Pd Power Dissipation Topr Operating Temperature Tstg Storage Temperature RECOMMENDED OPERATING CONDITIONS ˚C ,unless otherwise noted) ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) AVERAGE SUPPLY CURRENT from Vdd (Ta=0 - 70˚C, Vdd=VddQ=3.3±0.3V,Vss=VssQ=0V, unless otherwise noted) ITEM Operating current Precharge Standby current in Non-Power down mode Precharge Standby current in Power down mode Active Standby current Burst current ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) AC TIMING REQUIREMENTS (Ta=0 - 70˚C, Vdd=VddQ=3.3±0.3V,Vss=VssQ=0V, unless otherwise noted) Input Pulse Levels:0.8V-2.0V Input Timing Measurement Level:1.4V Parameter Symbol tCLK CLK cycle time tCH CLK High pulse width tCL CLK Low pulse width ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) SWITCHING CHARACTERISTICS (Ta=0 - 70˚C, Vdd=VddQ=3.3±0.3V,Vss=VssQ=0V, unless otherwise noted) Symbol Parameter tAC Access time from CLK Output Hold time tOH from CLK Delay time , output low- tOLZ impedance from CLK Delay time , output high- ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Burst Write (Single Bank) [BL= CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE#0 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/ ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Burst Write (Multi Bank) [BL= CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE tRC tRC tRAS tRP tRCD tWR ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Burst Read (Single Bank) [CL=2, BL= CLK /CS tRAS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 READ#0 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/ ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Burst Read (Multi Bank) [CL=2, BL= CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 READA tRC tRC tRCD tRCD ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Write Interrupted by Write [BL= CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE#0 ACT#1 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/ ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Read Interrupted by Read [CL=2, BL= CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 READ#0 ACT tRCD ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Write Interrupted by Read, Read Interrupted by Write [CL=2, BL= CLK /CS tRRD /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X X A12 X X BA0 ACT#0 WRITE#0 ACT#1 Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Write / Read Terminated by Precharge [CL=2, BL= CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE tRP tRAS tRCD tWR ACT#0 ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Write / Read Terminated by Burst Terminate [CL=2, BL= CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE#0 TBST Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/ ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Single Write Burst Read [CL=2, BL= CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE READ#0 Italic paramater shows minimum case Integrated Silicon Solution, Inc. — ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Power-Up Sequence and Intialize CLK 200 s /CS tRP /RAS /CAS /WE CKE DQM A0-9,11 A10 A12 BA0,1 DQ NOP Power On PRE ALL Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/05 tRFC REFA REFA REFA Minimum 8 REFA cycles ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Auto Refresh CLK /CS tRP /RAS /CAS /WE CKE DQM A0-9,11 A10 A12 BA0,1 DQ PRE ALL REFA All banks must be idle before REFA is issued tRFC ACT#0 Italic paramater shows minimum case Integrated Silicon Solution, Inc. — ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Self Refresh CLK /CS tRP /RAS /CAS /WE CKE DQM A0-9,11 A10 A12 BA0,1 DQ PRE ALL Self Refresh Entry All banks must be idle before REFS is issued. Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) CLK Suspension [CL=2, BL= CLK /CS /RAS tRCD /CAS /WE CKE DQM A0-9, A10 X A12 X BA0 ACT#0 WRITE#0 internal CLK READ#0 suspended Italic paramater shows minimum case Integrated Silicon Solution, Inc. — ...
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... IS42S83200A1 (4-bank x 8,388,608 - word x 8-bit) IS42S16160A1 (4-bank x 4,194,304 - word x 16-bit) Power Down CLK /CS /RAS /CAS /WE CKE DQM A0-9,11 A10 A12 BA0,1 DQ PRE ALL Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. B 10/28/ Standby Power Down ACT#0 ...
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... Frequency Speed (ns) 166 MHz 6 143 MHz 7 133 MHz 7.5 48 Order Part No. Package IS42S16160A1-6T 54-pin TSOP-II IS42S16160A1-7T 54-pin TSOP-II IS42S83200A1-75T 54-pin TSOP-II Order Part No. Package IS42S16160A1-6TL 54-pin TSOP-II IS42S16160A1-7TL 54-pin TSOP-II IS42S83200A1-75TL 54-pin TSOP-II Integrated Silicon Solution, Inc. — 1-800-379-4774 ISSI ® Rev. B 10/28/05 ...
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... C 0.12 0.21 D 22.02 22.42 E1 10.03 10.29 E 11.56 11.96 e 0.80 BSC L 0.40 0.60 L1 — — ZD 0.71 REF 0° 8° Integrated Silicon Solution, Inc. — 1-800-379-4774 Rev. C 01/28/02 N/2 Inches Min Max No. Leads (N) — 0.047 0.002 0.006 — — 0.012 0.018 0.005 0.0083 0.867 0.8827 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 — ...