is42s16100f-75tl Integrated Silicon Solution, Inc., is42s16100f-75tl Datasheet

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is42s16100f-75tl

Manufacturer Part Number
is42s16100f-75tl
Description
512k Words X 16 Bits X 2 Banks 16mb Sdram
Manufacturer
Integrated Silicon Solution, Inc.
Datasheet
IS42S16100F, IS42VS16100F
FEATURES
• Clock frequency:
• Fully synchronous; all signals referenced to a
• Two banks can be operated simultaneously and
• Dual internal bank controlled by A11
• Single power supply:
• LVTTL interface
• Programmable burst length
• Programmable burst sequence:
• 2048 refresh cycles every 32 ms
• Random column address every clock cycle
• Programmable CAS latency (2, 3 clocks)
• Burst read/write and burst read/single write
• Burst termination by burst stop and
• Byte controlled by LDQM and UDQM
• Packages 400-mil 50-pin TSOP-II and 60-ball
• Lead-free package option
• Available in Industrial Temperature
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without
notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the
latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com
Rev. 00A
08/22/08
512K Words x 16 Bits x 2 Banks
16Mb SDRAM
IS42S16100F: 200, 166, 143 MHz
IS42VS16100F: 133, 100 MHz
positive clock edge
independently
(bank select)
IS42S16100F: V
IS42VS16100F: V
– (1, 2, 4, 8, full page)
Sequential/Interleave
operations capability
precharge command
BGA
dd
dd
/V
/V
ddq
ddq
= 3.3V
= 1.8V
DESCRIPTION
ISSI
IS4V2S16100F is organized as a 524,288-word x 16-bit
x 2-bank for improved performance. The synchronous
DRAMs achieve high-speed data transfer using pipeline
architecture. All inputs and outputs signals refer to the
rising edge of the clock input.
ADDRESS TABLE
KEY TIMING PARAMETERS
Parameter
Power Supply V
Refresh Count
Row Addressing
Column Addressing
Bank Addressing
Precharge Addressing
Parameter
CLK Cycle Time
CAS Latency = 3
CAS Latency = 2
CLK Frequency
CAS Latency = 3
CAS Latency = 2
Access Time from
Clock
CAS Latency = 3
CAS Latency = 2
Notes:
1. Available for IS42S16100F
2. Available for IS42VS16100F only
’s 16Mb Synchronous DRAM IS42S16100F/
dd
/V
ddq
-5
200
100
10
5
5
6
(1)
IS42S16100F
166
100
-6
ADVANCED INFORMATION
5.5
10
6
6
2K/32ms
(1)
3.3V
-7
143
100
5.5
10
AUGUST 2008
7
6
(1)
A0-A10
A0-A7
-7.5
A11
A10
133
100
7.5
10
6
8
IS42VS16100F
(2)
2K/32ms
-10
1.8V
100
10
12
83
7
8
(2)
Unit
Mhz
Mhz
ns
ns
ns
ns
1

Related parts for is42s16100f-75tl

is42s16100f-75tl Summary of contents

Page 1

... ADVANCED INFORMATION AUGUST 2008 DESCRIPTION ISSI ’s 16Mb Synchronous DRAM IS42S16100F/ IS4V2S16100F is organized as a 524,288-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. ...

Page 2

... IS42S16100F, IS42VS16100F PIN CONFIGURATIONS 50-Pin TSOP (Type II) VDD 1 50 DQ0 2 49 DQ1 3 48 GNDQ 4 47 DQ2 5 46 DQ3 6 45 VDDQ 7 44 DQ4 8 43 DQ5 9 42 GNDQ 10 41 DQ6 11 40 DQ7 12 39 VDDQ 13 38 LDQM CAS 16 35 RAS ...

Page 3

... IS42S16100F, IS42VS16100F PIN CONFIGURATION PACKAGe CODe BALL FBGA (Top View) (10 6.4 mm Body, 0.65 mm Ball Pitch PIN DESCRIPTIONS A0-A10 Row Address Input A0-A7 Column Address Input A11 Bank Select Address DQ0 to DQ15 Data I/O CLK System Clock Input ...

Page 4

... IS42S16100F, IS42VS16100F PIN FUNCTIONS Pin No. Symbol Type A0-A10 Input Pin A11 Input Pin 16 Input Pin CAS 34 CKe Input Pin 35 CLK Input Pin 18 Input Pin DQ0 to DQ Pin 12, 39, 40, 42, 43, DQ15 45, 46, 48, 49 14, 36 LDQM, ...

Page 5

... IS42S16100F, IS42VS16100F FUNCTIONAL BLOCK DIAGRAM CLK CKE COMMAND CS DECODER RAS CAS & WE CLOCK MODE A11 GENERATOR REGISTER 11 A10 SELF A9 REFRESH REFRESH A8 CONTROLLER CONTROLLER A7 A6 REFRESH A5 COUNTER ROW ADDRESS LATCH 11 Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 08/22/08 MEMORY CELL ...

Page 6

... IS42S16100F, IS42VS16100F IS42S16100F ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage iN V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature ...

Page 7

... IS42S16100F, IS42VS16100F IS42S16100F DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter i Operating Current (1,2) cc1 i Precharge Standby Current cc2p (In Power-Down Mode) I Precharge Standby Current cc2ps (In Power-Down and Clock Suspend Mode) i Precharge Standby Current (3) cc2n (In Non Power-Down Mode) I Precharge Standby Current ...

Page 8

... IS42S16100F, IS42VS16100F IS42S16100F AC CHARACTERISTICS Symbol Parameter t 3 Clock Cycle Time Access Time From CLK ( CLK HIGH Level Width chi t CLK LOW Level Width Output Data Hold Time Output LOW Impedance Time ...

Page 9

... IS42S16100F, IS42VS16100F IS42S16100F OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac t Command Period (ReF to ReF / ACT to ACT Command Period (ACT to PRe) ...

Page 10

... IS42S16100F, IS42VS16100F IS42VS16100F ELECTRICAL SPECIFICATIONS ABSOLUTE MAXIMUM RATINGS Symbol Parameters V Maximum Supply Voltage dd max V Maximum Supply Voltage for Output Buffer ddq max V Input Voltage in V Output Voltage out P Allowable Power Dissipation d max I output Shorted Current cs T operating Temperature opr T Storage Temperature ...

Page 11

... IS42S16100F, IS42VS16100F IS42VS16100F DC ELECTRICAL CHARACTERISTICS (Recommended Operation Conditions unless otherwise noted.) Symbol Parameter i Operating Current (1,2) cc1 i Precharge Standby Current cc2p (In Power-Down Mode) I Precharge Standby Current cc2ps (In Power-Down and Clock Suspend Mode) i Precharge Standby Current (3) cc2n (In Non Power-Down Mode) I Precharge Standby Current ...

Page 12

... IS42S16100F, IS42VS16100F IS42VS16100F AC CHARACTERISTICS Symbol Parameter t 3 Clock Cycle Time Access Time From CLK ( CLK HIGH Level Width chi t CLK LOW Level Width Output Data Hold Time Output LOW Impedance Time ...

Page 13

... IS42S16100F, IS42VS16100F IS42VS16100F OPERATING FREQUENCY / LATENCY RELATIONSHIPS SYMBOL PARAMETER — Clock Cycle Time — Operating Frequency t CAS Latency cac t Active Command To Read/Write Command Delay Time rcd t RAS Latency ( rac rcd cac t Command Period (REF to REF / ACT to ACT Command Period (ACT to PRE) ...

Page 14

... IS42S16100F, IS42VS16100F COMMANDS Active Command CLK CKE HIGH CS RAS CAS WE A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 Write Command CLK HIGH CKE CS RAS CAS WE A0-A9 COLUMN AUTO PRECHARGE A10 NO PRECHARGE BANK 1 A11 BANK 0 Notes: 1. A8-A9 = Don’t Care. 14 Read Command CLK CKE HIGH CS RAS ...

Page 15

... IS42S16100F, IS42VS16100F COMMANDS (cont.) No-Operation Command CLK CKE HIGH CS RAS CAS WE A0-A9 A10 A11 Mode Register Set Command CLK HIGH CKE CS RAS CAS WE A0-A9 OP-CODE A10 OP-CODE A11 OP-CODE Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 08/22/08 Device Deselect Command CLK CKE HIGH ...

Page 16

... IS42S16100F, IS42VS16100F COMMANDS (cont.) Self-Refresh Command CLK CKE CS RAS CAS WE A0-A9 A10 A11 Clock Suspend Command CLK CKE BANK(S) ACTIVE CS NOP RAS NOP CAS NOP WE NOP A0-A9 A10 A11 16 Power Down Command CLK CKE ALL BANKS IDLE CS NOP RAS NOP CAS NOP WE NOP ...

Page 17

... Active Command (CS, RAS = LOW, CAS, WE= HIGH) The IS42S16100F/IS4V2S16100F includes two banks of 2048 rows each. This command selects one of the two banks according to the A11 pin and activates the row selected by the pins A0 to A10. This command corresponds to the fall of the RAS signal from HIGH to LOW in conventional DRAMs ...

Page 18

... IS42S16100F, IS42VS16100F Self-Refresh Command (CS, RAS, CAS, CKE = LOW HIGH) This command executes the self-refresh operation. The row address to be refreshed, the bank, and the refresh interval are generated automatically internally during this operation. The self-refresh operation is started by dropping the CKE pin from HIGH to LOW. The self-refresh operation continues as long as the CKE pin remains LOW and there is no need for external control of any other pins ...

Page 19

... IS42S16100F, IS42VS16100F COMMAND TRUTH TABLE (1,2) Symbol Command (E)MRS (Extended) Mode Register Set REF Auto-Refresh (5) SREF Self-Refresh (5,6) PRE Precharge Selected Bank PALL Precharge Both Banks ACT Bank Activate (7) WRIT Write WRITA Write With Auto-Precharge READ Read (8) READA Read With Auto-Precharge BST Burst Stop ...

Page 20

... IS42S16100F, IS42VS16100F OPERATION COMMAND TABLE Current State Command Operation Idle DeSL No Operation or Power-Down NOP No Operation or Power-Down BST No Operation or Power-Down ReAD / ReADA Illegal WRIT/WRITA Illegal ACT Row Active PRe/PALL No Operation ReF/SeLF Auto-Refresh or Self-Refresh MRS Mode Register Set Row Active DeSL No Operation NOP ...

Page 21

... IS42S16100F, IS42VS16100F OPERATION COMMAND TABLE Current State Command Operation Write With DeSL Burst Write Continues, Write Recovery And Precharge Auto-Precharge When Done NOP Burst Write Continues, Write Recovery And Precharge BST Illegal ReAD/ReADA Illegal WRIT/WRITA Illegal Illegal (10) ACT Illegal (10) PRe/PALL ReF/SeLF ...

Page 22

... The IS42S16100F/IS4V2S16100F can be switched to power-down mode by dropping the CKe pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time. 13. The IS42S16100F/IS4V2S16100F can be switched to self-refresh mode by dropping the CKe pin LOW when both banks in the idle state. Input pins other than CKE are ignored at this time. ...

Page 23

... IS42S16100F, IS42VS16100F CKE RELATED COMMAND TRUTH TABLE Current State Operation Self-Refresh Undefined Self-Refresh Recovery Self-Refresh Recovery Illegal (2) Illegal (2) Maintain Self-Refresh Self-Refresh Recovery Idle State After t Idle State After t Illegal Illegal Power-Down on the Next Cycle Power-Down on the Next Cycle Illegal Illegal Clock Suspend Termination on the Next Cycle ...

Page 24

... IS42S16100F, IS42VS16100F TWO BANKS OPERATION COMMAND TRUTH TABLE Operation CS RAS CAS WE A11 A10 A9-A0 DeSL NOP BST ReAD/ReADA WRIT/WRITA ACT PRe/PALL ReF MRS Notes HIGH level input, L: LOW level input, X: HIGH or LOW level input, RA: Row Address, CA: Column Address 2 ...

Page 25

... IS42S16100F, IS42VS16100F SIMPLIFIED STATE TRANSITION DIAGRAM WRIT CKE_ CKE CLOCK WRITA SUSPEND CKE_ CKE POWER APPLIED Automatic transition following the completion of command execution. Transition due to command input. Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 08/22/08 (One Bank Operation) SREF entry MRS ...

Page 26

... IS42S16100F, IS42VS16100F Device Initialization At Power-On (Power-On Sequence the case with conventional DRAMs, the IS42S16100F/ IS4V2S16100F product must be initialized by executing a stipulated power-on sequence after power is applied. After power is applied and Vdd and VddQ reach their stipulated voltages, set and hold the CKe and DQM pins HIGH for 100 µ ...

Page 27

... IS42S16100F, IS42VS16100F MODE REGISTER A11 A10 WRITe MODe LT MODe M11 M10 Note: Other values for these bits are reserved. Integrated Silicon Solution, Inc. — www.issi.com Rev. 00A 08/22/08 Address Bus (Ax Mode Register (Mx) ...

Page 28

... IS42S16100F, IS42VS16100F BURST LENGTH AND COLUMN ADDRESS SEQUENCE Column Address Burst Length Full Page n n (256) Notes: 1. The burst length in full page mode is 256. ...

Page 29

... IS42S16100F, IS42VS16100F BANK SELECT AND PRECHARGE ADDRESS ALLOCATION Row X0 — X1 — X2 — X3 — X4 — X5 — X6 — X7 — X8 — X9 — X10 0 1 Command) X11 0 1 Column Y0 — Y1 — Y2 — Y3 — Y4 — Y5 — Y6 — Y7 — Y8 — Y9 — Y10 0 1 Y11 0 1 Integrated Silicon Solution, Inc. — www.issi.com Rev ...

Page 30

... IS42S16100F, IS42VS16100F Burst Read The read cycle is started by executing the read command. The address provided during read command execution is used as the starting address. First, the data corresponding to this address is output in synchronization with the clock signal after the CAS latency period. Next, data corresponding to an address generated automatically by the device is output in synchronization with the clock signal ...

Page 31

... IS42S16100F, IS42VS16100F Read With Auto-Precharge The read with auto-precharge command first executes a burst read operation and then puts the selected bank in the precharged state automatically. After the precharge completes, the bank goes to the idle state. Thus this command performs a read command and a precharge command in a single operation ...

Page 32

... IS42S16100F, IS42VS16100F Write With Auto-Precharge The write with auto-precharge command first executes a burst write operation and then puts the selected bank in the precharged state automatically. After the precharge completes the bank goes to the idle state. Thus this command performs a write command and a precharge command in a single operation ...

Page 33

... IS42S16100F, IS42VS16100F Interval Between Read Command A new command can be executed while a read cycle is in progress, i.e., before that cycle completes. When the second read command is executed, after the CAS latency has elapsed, data corresponding to the new read command is output in place of the data due to the previous read command ...

Page 34

... IS42S16100F, IS42VS16100F Interval Between Write and Read Commands A new read command can be executed while a write cycle is in progress, i.e., before that cycle completes. Data corresponding to the new read command is output after the CAS latency has elapsed from the point the new read command was executed ...

Page 35

... IS42S16100F, IS42VS16100F Interval Between Read and Write Commands A read command can be interrupted and a new write command executed while the read cycle is in progress, i.e., before that cycle completes. Data corresponding to the new write command can be input at the point new write command is executed. To prevent collision ...

Page 36

... IS42S16100F, IS42VS16100F Precharge The precharge command sets the bank selected by pin A11 to the precharged state. This command can be executed at a time t following the execution of an active ras command to the same bank. The selected bank goes to the idle state at a time t following the execution of the ...

Page 37

... IS42S16100F, IS42VS16100F Write Cycle Interruption Using the Precharge Command A write cycle can be interrupted by the execution of the precharge command before that cycle completes. The delay time (t ) from the precharge command to the point wdl where burst input is invalid, i.e., the point where input data is no longer written to device internal memory is zero clock cycles regardless of the CAS ...

Page 38

... The IS42S16100F/IS4V2S16100F can output data continuously from the burst start address (a) to location a+255 during a read cycle in which the burst length is set to full page. The IS42S16100F/IS4V2S16100F repeats the operation starting at the 256th cycle with the data output returning to location (a) and continuing with a+1, a+2, a+3, etc ...

Page 39

... The IS42S16100F/IS4V2S16100F can input data continuously from the burst start address (a) to location a+255 during a write cycle in which the burst length is set to full page. The IS42S16100F/IS4V2S16100F repeats the operation starting at the 256th cycle with data input returning to location (a) and continuing with a+1, a+2, a+3, etc ...

Page 40

... CAS latency, as soon as one of the U/LDQM pins goes HIGH, the corresponding externally applied input data will no longer be written to the device internal circuits. Subsequently, the corresponding input continues to be muted as long as that U/LDQM pin remains HIGH. The IS42S16100F/IS4V2S16100F will revert to accepting input as soon as CLK COMMAND UDQM ...

Page 41

... CAS latency = 3 Clock Suspend When the CKe pin is dropped from HIGH to LOW during a read or write cycle, the IS42S16100F/IS4V2S16100F enters clock suspend mode on the next CLK rising edge. This command reduces the device power dissipation by stopping the device internal clock. Clock suspend mode continues as long as the CKe pin remains low ...

Page 42

... IS42S16100F, IS42VS16100F OPERATION TIMING EXAMPLE Power-On Sequence, Mode Register Set Cycle CLK t CHI HIGH CKE RAS CAS A0- A10 BANK 0 & 1 A11 DQM HIGH DQ WAIT TIME t RP T=100 µs < ...

Page 43

... IS42S16100F, IS42VS16100F Power-Down Mode Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0- A10 BANK 0 & 1 BANK A11 BANK 1 BANK 0 DQM < > PRE < > PALL CAS latency = 2, 3 Integrated Silicon Solution, Inc. — ...

Page 44

... IS42S16100F, IS42VS16100F Auto-Refresh Cycle CLK t CHI CKS CK CL CKE RAS CAS A0- A10 BANK 0 & 1 A11 DQM < > PALL CAS latency = < > < > < REF REF Integrated Silicon Solution, Inc. — ...

Page 45

... IS42S16100F, IS42VS16100F Self-Refresh Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0- A10 BANK 0 & 1 A11 DQM < > PALL CAS latency = 2, 3 Note 1: A8,A9 = Don’t Care. Integrated Silicon Solution, Inc. — www.issi.com Rev ...

Page 46

... IS42S16100F, IS42VS16100F Read Cycle CLK t CHI CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > < ACT READ CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’ ...

Page 47

... IS42S16100F, IS42VS16100F Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 48

... IS42S16100F, IS42VS16100F Read Cycle / Full Page CLK t CHI t t CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC (BANK 0) < ...

Page 49

... IS42S16100F, IS42VS16100F Read Cycle / Ping-Pong Operation (Bank Switching CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RRD (BANK ...

Page 50

... IS42S16100F, IS42VS16100F Write Cycle CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 2, burstlength = 4 Note 1: A8,A9 = Don’ ...

Page 51

... IS42S16100F, IS42VS16100F Write Cycle / Auto-Precharge CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 52

... IS42S16100F, IS42VS16100F Write Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RCD t RAS t RC < ...

Page 53

... IS42S16100F, IS42VS16100F Write Cycle / Ping-Pong Operation CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 0 A11 DQM DQ t RRD (BANK RCD ...

Page 54

... IS42S16100F, IS42VS16100F Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 55

... IS42S16100F, IS42VS16100F Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS ...

Page 56

... IS42S16100F, IS42VS16100F Write Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 57

... IS42S16100F, IS42VS16100F Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS ...

Page 58

... IS42S16100F, IS42VS16100F Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 59

... IS42S16100F, IS42VS16100F Write Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 60

... IS42S16100F, IS42VS16100F Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 61

... IS42S16100F, IS42VS16100F Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK DQM DQ t RCD t RAS t RC < ...

Page 62

... IS42S16100F, IS42VS16100F Read Cycle / Byte Operation CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD ...

Page 63

... IS42S16100F, IS42VS16100F Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD ...

Page 64

... IS42S16100F, IS42VS16100F Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM ...

Page 65

... IS42S16100F, IS42VS16100F Read Cycle CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’ ...

Page 66

... IS42S16100F, IS42VS16100F Read Cycle / Auto-Precharge CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW A10 ROW BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 67

... IS42S16100F, IS42VS16100F Read Cycle / Full Page CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD (BANK 0) t RAS ...

Page 68

... IS42S16100F, IS42VS16100F Read Cycle / Ping Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RRD ...

Page 69

... IS42S16100F, IS42VS16100F Write Cycle CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < > ACT CAS latency = 3, burst length = 4 Note 1: A8,A9 = Don’ ...

Page 70

... IS42S16100F, IS42VS16100F Write Cycle / Auto-Precharge CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 71

... IS42S16100F, IS42VS16100F Write Cycle / Full Page CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC < ...

Page 72

... IS42S16100F, IS42VS16100F Write Cycle / Ping-Pong Operation (Bank Switching CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RRD (BANK ...

Page 73

... IS42S16100F, IS42VS16100F Read Cycle / Page Mode CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 74

... IS42S16100F, IS42VS16100F Read Cycle / Page Mode; Data Masking CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 DQM DQ t RCD ...

Page 75

... IS42S16100F, IS42VS16100F Write Cycle / Page Mode CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 0 A11 DQM DQ t RCD t RAS t RC < ...

Page 76

... IS42S16100F, IS42VS16100F Write Cycle / Page Mode; Data Masking CLK t CHI t t CKS CKE t CKA RAS CAS A0-A9 ROW ROW A10 t t BANK BANK 1 A11 BANK 0 BANK 0 ...

Page 77

... IS42S16100F, IS42VS16100F Read Cycle / Clock Suspend CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 78

... IS42S16100F, IS42VS16100F Write Cycle / Clock Suspend CLK t CHI CKS CK CL CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 79

... IS42S16100F, IS42VS16100F Read Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 80

... IS42S16100F, IS42VS16100F Write Cycle / Precharge Termination CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 0 DQM DQ t RCD t RAS t RC < ...

Page 81

... IS42S16100F, IS42VS16100F Read Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD ...

Page 82

... IS42S16100F, IS42VS16100F Write Cycle / Byte Operation CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 A11 BANK 1 BANK 0 UDQM LDQM DQ8-15 DQ0-7 t RCD ...

Page 83

... IS42S16100F, IS42VS16100F Read Cycle, Write Cycle / Burst Read, Single Write CLK t CHI CKS CL CK CKE t CKA RAS CAS A0-A9 ROW ROW A10 BANK 1 A11 BANK 0 ...

Page 84

... IS42S16100F-6TL IS42S16100F-6BL 7 IS42S16100F-7TL IS42S16100F-7BL Order Part No. 6 IS42S16100F-6TLI IS42S16100F-6BLI 7 IS42S16100F-7TLI IS42S16100F-7BLI = 1.8V DD Order Part No. 7.5 IS42S16100F-75TL IS42S16100F-75BL 10 IS42VS16100F-10TL IS42VS16100F-10BL Order Part No. 7.5 IS42VS16100F-75TLI IS42VS16100F-75BLI 10 IS42VS16100F-10TLI IS42VS16100F-10BLI Integrated Silicon Solution, Inc. — www.issi.com Package 400-mil TSOP II, Lead-free 60-ball BGA, Lead-free 400-mil TSOP II, Lead-free 60-ball BGA, Lead-free ...

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... Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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... Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products. Integrated Silicon Solution, Inc. — ...

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