lh28f016sct-zr Sharp Microelectronics of the Americas, lh28f016sct-zr Datasheet - Page 13

• Manufacturer Part Number: lh28f016sct-zr
• Description: Flash Memory 16mbit 2mbitx8
• Manufacturer: Sharp Microelectronics of the Americas

NOTES:
1. Refer to DC Characteristics. When V
2. X can be V
3. RY/BY# is V
4. RP# at GND±0.2V ensures the lowest deep power-down current.
5. See Section 4.2 for read identifier code data.
6. Command writes involving block erase, write, or lock-bit configuration are reliably executed when V
7. Refer to Table 4 for valid D
8. Don’t use the timing both OE# and WE# are V
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
V
It is V
suspend mode, or deep power-down mode.
and V
spurious results and should not be attempted.
PPLK
OH
CC
and V
Mode
=V
during when the WSM is not busy, in block erase suspend mode (with byte write inactive), byte write
IL
CC2/3/4
OL
PPH1/2/3
or V
when the WSM is executing internal block erase, byte write, or lock-bit configuration algorithms.
IH
. Block erase, byte write, or lock-bit configuration with V
for control pins and addresses, and V
voltages.
1,2,3,8
3,6,7,8
Notes
IN
3
3
4
8
during a write operation.
V
V
V
V
V
RP#
V
V
V
V
V
IH
IH
IH
V
IH
IH
PP
HH
HH
HH
HH
HH
IL
or
or
or
or
or
≤V
Table 3. Bus Operations
PPLK
CE#
V
V
V
V
V
X
IL
, memory contents can be read, but not altered.
IH
IL
IL
IL
IL
.
LHF16CZR
OE#
V
V
V
V
X
X
IH
IH
IL
IL
PPLK
WE#
or V
V
V
V
V
X
X
IH
IH
IH
IL
PPH1/2/3
Address
Figure 4
See
CC
X
X
X
X
X
for V
<3.0V or V
PP
. See DC Characteristics for
V
X
X
X
X
X
X
PP
IH
<RP#<V
High Z
High Z
High Z
Note 5
DQ
D
D
OUT
IN
0-7
HH
PP
produce
=V
RY/BY#
Rev. 1.2
PPH1/2/3
V
V
X
X
X
X
OH
OH
10