lh28f016sct-zr Sharp Microelectronics of the Americas, lh28f016sct-zr Datasheet - Page 38

• Manufacturer Part Number: lh28f016sct-zr
• Description: Flash Memory 16mbit 2mbitx8
• Manufacturer: Sharp Microelectronics of the Americas

6.2.6 ALTERNATIVE CE#-CONTROLLED WRITES
NOTE:
See 5.0V V
NOTE:
See 5V V
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AVAV
PHEL
WLEL
ELEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHGL
AVAV
PHEL
WLEL
ELEH
PHHEH
VPEH
AVEH
DVEH
EHDX
EHAX
EHWH
EHEL
EHRL
EHGL
QVVL
QVPH
Sym.
Sym.
CC
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
Write Recovery before Read
Write Cycle Time
RP# High Recovery to CE# Going Low
WE# Setup to CE# Going Low
CE# Pulse Width
RP# V
V
Address Setup to CE# Going High
Data Setup to CE# Going High
Data Hold from CE# High
Address Hold from CE# High
WE# Hold from CE# High
CE# Pulse Width High
CE# High to RY/BY# Going Low
Write Recovery before Read
V
RP# V
CC
PP
PP
Alternative CE#-Controlled Writes for Notes 1 through 5.
Alternative CE#-Controlled Writes for notes 1 through 5.
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
HH
HH
Setup to CE# Going High
Hold from Valid SRD, RY/BY# High
Parameter
Parameter
Versions
Versions
V
V
(5)
(5)
CC
CC
=3.3V±0.3V, T
=2.7V-3.6V, T
LHF16CZR
(1)
A
A
=0°C to +70°C
=0°C to +70°C
Notes
Notes
2,4
2,4
2
3
3
2
2
2
3
3
LH28F016SC-L150
LH28F016SC-L120
Min.
Min.
150
120
100
100
70
50
50
25
70
50
50
25
1
0
5
5
0
0
1
0
5
5
0
0
0
0
Max.
Max.
100
Rev. 1.2
Unit
Unit
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
35