lh28f016sct-zr Sharp Microelectronics of the Americas, lh28f016sct-zr Datasheet - Page 5

• Manufacturer Part Number: lh28f016sct-zr
• Description: Flash Memory 16mbit 2mbitx8
• Manufacturer: Sharp Microelectronics of the Americas

SHARP’s LH28F016SCT-ZR Flash memory with SmartVoltage technology is a high-density, low-cost, nonvolatile,
read/write storage solution for a wide range of applications. Its symmetrically-blocked architecture, flexible voltage
and extended cycling provide for highly flexible component suitable for resident flash arrays, SIMMs and memory
cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications. For
secure code storage applications, such as networking, where code is either directly executed out of flash or
downloaded to DRAM, the LH28F016SCT-ZR offers three levels of protection: absolute protection with V
GND, selective hardware block locking, or flexible software block locking. These alternatives give designers
ultimate control of their code security needs.
The LH28F016SCT-ZR is manufactured on SHARP’s 0.38µm ETOX
industry-standard package: the 40-lead TSOP, ideal for board constrained applications. Based on the 28F008SA
architecture, the LH28F016SCT-ZR enables quick and easy upgrades for designs demanding the state-of-the-art.
*ETOX is a trademark of Intel Corporation.
SmartVoltage Technology
High-Performance Read Access Time
Operating Temperature
High-Density Symmetrically-Blocked
Architecture
Extended Cycling Capability
Industry-Standard Packaging
Low Power Management
2.7V(Read-Only), 3.3V or 5V V
3.3V, 5V or 12V V
90ns(5V±0.25V), 100ns(5V±0.5V),
120ns(3.3V±0.3V), 150ns(2.7V-3.6V)
0°C to +70°C
Thirty-two 64K-byte Erasable Blocks
100,000 Block Erase Cycles
3.2 Million Block Erase Cycles/Chip
40-Lead TSOP
Deep Power-Down Mode
Automatic Power Savings Mode
Decreases I
CC
in Static Mode
SmartVoltage Flash MEMORY
PP
16M-BIT (2 MB x 8)
LH28F016SCT-ZR
CC
LHF16CZR
Automated Byte Write and Block Erase
Enhanced Automated Suspend Options
Enhanced Data Protection Features
SRAM-Compatible Write Interface
ETOX
CMOS Process
(P-type silicon substrate)
Not designed or rated as radiation
hardened
Command User Interface
Status Register
Byte Write Suspend to Read
Block Erase Suspend to Byte Write
Block Erase Suspend to Read
Absolute Protection with V
Flexible Block Locking
Block Erase/Byte Write Lockout
during Power Transitions
TM*
Nonvolatile Flash Technology
TM
process technology. It come in
PP
=GND
Rev. 1.2
PP
at
2