m58bw016db STMicroelectronics, m58bw016db Datasheet - Page 16

• Manufacturer Part Number: m58bw016db
• Description: 16 Mbit 512kb X32, Boot Block, Burst 3v Supply Flash Memories
• Manufacturer: STMicroelectronics

Signal descriptions
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Burst Clock (K)
The Burst Clock, K, is used to synchronize the memory with the external bus during
Synchronous Burst Read operations. Bus signals are latched on the active edge of the
Clock. The Clock can be configured to have an active rising or falling edge. In Synchronous
Burst Read mode the address is latched on the first active clock edge when Latch Enable is
Low, V
During Asynchronous Bus operations the Clock is not used.
Burst Address Advance (B)
The Burst Address Advance, B, controls the advancing of the address by the internal
address counter during Synchronous Burst Read operations.
Burst Address Advance, B, is only sampled on the active clock edge of the Clock when the
X-latency time has expired. If Burst Address Advance is Low, V
counter advances. If Burst Address Advance is High, V
not change; the same data remains on the Data inputs/outputs and Burst Address Advance
is not sampled until the Y-latency expires.
The Burst Address Advance, B, may be tied to V
Valid Data Ready (R)
The Valid Data Ready output, R, is an open drain output that can be used, during
Synchronous Burst Read operations, to identify if the memory is ready to output data or not.
The Valid Data Ready output can be configured to be active on the clock edge of the invalid
data read cycle or one cycle before. Valid Data Ready, at V
will be available. When Valid Data Ready is Low, V
active.
In all asynchronous operations, Valid Data Ready is high-impedance. It may be tied to other
components with the same Valid Data Ready signal to create a unique system Ready
signal. The Valid Data Ready output has an internal pull-up resistor of around 1 MΩ
powered from V
meet the external timing requirements for Valid Data Ready going to V
Write Protect (WP)
The Write Protect, WP, provides protection against program or erase operations. When
Write Protect, WP, is at V
configuration) parameter blocks and all main blocks are locked. When Write Protect WP is at
V
Supply voltage (V
The supply voltage, V
the V
IH
all the blocks can be programmed or erased, if no other protection is used.
DD
IL
, or on the rising edge of Latch Enable, whichever occurs first.
pin, including the Program/Erase controller.
DDQ
, designers should use an external pull-up resistor of the correct value to
DD
, is the core power supply. All internal circuits draw their current from
IL
DD
the first two (in the bottom configuration) or last two (in the top
M58BW016DT, M58BW016DB, M58BW016FT, M58BW016FB
)
IL
.
IL
, the previous data outputs remain
IH
, the internal address counter does
IH
, indicates that new data is or
IL
, the internal address
IH
.