m58bw016bt

Manufacturer Part Numberm58bw016bt
Description16 Mbit 512kb X32, Boot Block, Burst 3v Supply Flash Memories
ManufacturerSTMicroelectronics
m58bw016bt datasheet
 
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PE4FEATURES SUMMARY
SUPPLY VOLTAGE
– V
= 2.7V to 3.6V for Program, Erase and
DD
Read
– V
= V
= 2.4V to 3.6V for I/O Buffers
DDQ
DDQIN
– V
= 12V for fast Program (optional)
PP
HIGH PERFORMANCE
– Access Time: 80, 90 and 100ns
– 56MHz Effective Zero Wait-State Burst Read
– Synchronous Burst Reads
– Asynchronous Page Reads
HARDWARE BLOCK PROTECTION
– WP pin Lock Program and Erase
SOFTWARE BLOCK PROTECTION
– Tuning Protection to Lock Program and
Erase with 64 bit User Programmable Pass-
word (M58BW016B version only)
OPTIMIZED for FDI DRIVERS
– Fast Program / Erase suspend latency
time < 6µs
– Common Flash Interface
MEMORY BLOCKS
– 8 Parameters Blocks (Top or Bottom)
– 31 Main Blocks
LOW POWER CONSUMPTION
– 5µA Typical Deep Power Down
– 60µA Typical Standby
– Automatic Standby after Asynchronous Read
ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Top Device Code M58BW016xT: 8836h
– Bottom Device Code M58BW016xB: 8835h
May 2003
M58BW016BT, M58BW016BB
M58BW016DT, M58BW016DB
16 Mbit (512Kb x32, Boot Block, Burst)
3V Supply Flash Memories
Figure 1. Packages
10 x 8 ball array
PQFP80 (T)
BGA
LBGA80 (ZA)
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