m58wr032et STMicroelectronics, m58wr032et Datasheet - Page 80

• Manufacturer Part Number: m58wr032et
• Description: 32 Mbit 2mb X 16, Multiple Bank, Burst 1.8v Supply Flash Memory
• Manufacturer: STMicroelectronics

M58WR032ET, M58WR032EB
REVISION HISTORY
Table 44. Document Revision History
80/81
20-May-2003
07-Aug-2002
12-Dec-2002
07-Feb-2003
13-Apr-2004
Date
Version
1.0
1.1
1.2
1.3
2.0
First Issue
Clear Status Register
Configuration Register Command
5,
clarified;
Synchronous Read
WAIT Active Low bar removed from Figures 10, 11. Note 4 added to Figure
modified in Figure 13.
Package mechanical information corrected and Daisy Chain added (Figures
20). Data at address offsets 35h, 38h is reserved.
85ns Speed Class removed, 80ns Speed Class added. 70ns Speed Class
characterized (certain timings modified).
Block numbering corrected in
Address lines corrected in AC Waveforms. 2nd Bus Write Operation Address
modified for Enhanced Factory Program, Setup Program, in
Program
clarified. Data corrected at (P + 37)h = 70h offset in
Region 2
Datasheet promoted from Target Specification to Product Preview.
Automatic Standby mode explained under
changes in
Command
Bank Erase Command
Commands. Number of Bank Erase cycles limited to 100. Erase replaced by Block
Erase in Tables
Bank, respectively.
I
Currents.
V
AC Characteristics: for V
t
Document promoted from Product Preview to Full Datasheet status. Small text
changes.
PP2
ELLH
DDQ
7
and
parameter for V
and t
range split into two in Tables
9
Asynchronous Read
Commands.
Information.
modified;
LLLH
and
Clear Status Register
Synchronous Burst Read
in Table
11
and 12, Dual Operations Allowed in Other Banks and the Same
Mode, clarified;
PP
Erase Status Bit (SR5)
Command,
Clear Status Register Command
moved from the Standard to the Factory Program
= V
20
DDQ
PPH
and all the timings in
= 2.2V to 3.3V, t
Table
Mode,
removed from
Revision Details
Command,
Program/Erase Suspend
and Factory Program Commands clarified; Tables
20
28.,
Synchronous Burst Read Mode
and 21, Asynchronous and Synchronous Read
Top Boot Block Addresses,
Mode.
Asynchronous Read
and
Quadruple Enhanced Factory Program
AVQV1
Table 18., DC Characteristics -
Wait Configuration Bit
Table 21.
, t
Table 39., Bank and Erase Block
ELTV
and
, t
EHTZ
were modified.
Command,
Program Command
Table 7., Factory
, t
Mode. Minor text
EHQZ
M58WR032ET.
and
, t
(CR8),
Set
GLQV
Single
12
19
, t
AVLH
and
and
,