m36l0t7050b0 STMicroelectronics, m36l0t7050b0 Datasheet - Page 12

• Manufacturer Part Number: m36l0t7050b0
• Description: 128mbit Multiple Bank, Multi-level, Burst Flash Memory 32mbit 2m X16 Psram, Multi-chip Package
• Manufacturer: STMicroelectronics

M36L0T7050T0, M36L0T7050B0
DC AND AC PARAMETERS
This section summarizes the operating measure-
ment conditions, and the DC and AC characteris-
tics of the device. The parameters in the DC and
AC characteristics Tables that follow, are derived
from tests performed under the Measurement
Table 5. Operating and AC Measurement Conditions
Figure 5. AC Measurement I/O Waveform
Table 6. Device Capacitance
Note: Sampled only, not 100% tested.
12/18
V
V
V
V
V
environment)
Ambient Operating Temperature
Load Capacitance (C
Output Circuit Resistors (R
Input Rise and Fall Times
Input Pulse Voltages
Input and Output Timing Ref. Voltages
DDF
DDP
DDQF
PPF
PPF
V DDQ
Symbol
C
Supply Voltage
0V
Supply Voltage
Supply Voltage (Factory environment)
Supply Voltage (Application
C
Supply Voltage
OUT
IN
Parameter
Input Capacitance
Output Capacitance
L
)
Parameter
1
, R
2
)
V DDQ /2
AI06161
Test Condition
–0.4
Min
–25
1.7
2.7
8.5
–
V
Flash Memory
V
OUT
IN
0 to V
V
= 0V
DDQ
= 0V
30
22
Conditions summarized in
AC Measurement
check that the operating conditions in their circuit
match the operating conditions when relying on
the quoted parameters.
Figure 6. AC Measurement Load Circuit
0.1µF
DDQ
/2
V
V
DDF
DDQ
Max
12.6
2.0
3.3
85
–
5
0.1µF
+0.4
V
DDQ
C
L
Min
includes JIG capacitance
Conditions. Designers should
DEVICE
UNDER
Min
–30
TEST
2.7
–
–
–
–
5
0 to V
PSRAM
V
Table 5., Operating and
DDQ
50
22
Max
12
15
DDQ
V
/2
DDQ
C
Max
R
3.3
L
85
–
–
–
–
1
Unit
pF
pF
AI08364B
R
2
Unit
k
°C
pF
ns
V
V
V
V
V
V
V