ace2301 ACE Technology Co., LTD., ace2301 Datasheet - Page 3

• Manufacturer Part Number: ace2301
• Description: P-channel Enhancement Mode Mosfet
• Manufacturer: ACE Technology Co., LTD.

Electrical Characteristics
Note: Pulse test pulse width<=300us, duty cycle<=2%.
Drain-Source On-State Resistance
Drain-Source On-State Resistance
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Reverse Transfer Capacitance
Max. Diode Forward Current
Forward Trans conductance
Gate Threshold Voltage
Diode Forward Voltage
Gate-Source Charge
Turn-On Delay Time
Turn-Off Delay Time
Gate Body Leakage
Output Capacitance
Gate-Drain Charge
Turn-On Rise Time
Total Gate Charge
Input Capacitance
Turn-Off Fall Time
Parameter
Technology
Symbol
R
R
BV
V
T
t
DS(ON
C
DS(ON)
I
I
C
V
Q
Q
C
GS(th)
G
Source-Drain Diode
Q
d(off)
DSS
GSS
d(on)
T
I
t
oss
S
SD
iss
rss
DSS
gd
gs
f
fs
g
f
)
Dynamic
P-Channel Enhancement Mode MOSFET
Static
V
V
V
VDS=-6V, VGS=0V
I
V
V
D
V
V
DS
V
GS
GS
I
V
DS
=-1A, V
S
GS
DS
DS
GS
3)
DD
=-1.6A,V
=VGS, I
=-4.5V, I
=-2.5V, I
Conditions
=-9.6V, V
=0V, I
=-5V, I
=-6V, I
=±8V, V
V
F=1.0MHz
=-6V,RL=6Ω
R
GS
G
=-4.5V
=6Ω
GEN
D
D
D
=250uA
D
D
D
GS
=-2.8A
=-2.8A
=250uA
DS
=-4.5V
=-2.8A
=-2.0A
GS
=0V
=0V
=0V
Min.
-0.4
-20
Typ.
70.0
85.0
0.85
415
223
6.5
5.8
1.7
13
36
42
34
87
ACE2301
100.0
150.0
Max.
±100
-0.9
-1.6
-1.2
10
25
60
70
60
-1
VER 1.2
Unit
mΩ
uA
nA
nC
pF
ns
V
V
S
A
V
3