gds1110bb Intel Corporation, gds1110bb Datasheet

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gds1110bb

Manufacturer Part Number
gds1110bb
Description
Intel-r Strongarm Sa-1110 Microprocessor
Manufacturer
Intel Corporation
Datasheet

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GDS1110BB
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OKI
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Part Number:
GDS1110BB
Manufacturer:
INTEL/英特尔
Quantity:
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Intel
Microprocessor
Product Features
High performance
Low power (normal mode)
Integrated clock generation
Power-management features
Big and little endian operating modes
3.3-V I/O interface
— 150 Dhrystone 2.1 MIPS @ 133 MHz
— 235 Dhrystone 2.1 MIPS @ 206 MHz
— <240 mW @1.55 V/133 MHz
— <400 mW @1.75 V/206 MHz
— Internal phase-locked loop (PLL)
— 3.686-MHz oscillator
— 32.768-kHz oscillator
— Normal (full-on) mode
— Idle (power-down) mode
— Sleep (power-down) mode
®
StrongARM* SA-1110
The Intel
optimized for meeting portable and embedded application requirements.
The SA-1110 incorporates a 32-bit StrongARM RISC processor capable of
running at up to 206 MHz. The SA-1110 has a large instruction and data
cache, memory-management unit (MMU), and read/write buffers. The
SA-1110 memory bus interfaces to many device types including
synchronous DRAM (SDRAM), synchronous mask ROM (SMROM), and
SRAM-like variable latency I/O devices with a shared data ready signal. In
addition, the SA-1110 provides system support logic, multiple serial
communication channels, a color/gray scale LCD controller, PCMCIA
support for up to two sockets, and general-purpose I/O ports.
Power dissipation, particularly in idle mode, is strongly dependent on the details of the
system design
®
StrongARM SA-1110 Microprocessor (SA-1110) is a device
Memory bus
32-way set-associative caches
32-entry MMUs
Write buffer
Read buffer
256 mini-ball grid array (mBGA)
— Interfaces to ROM, synchronous mask
— Supports two PCMCIA sockets
— 16 Kbyte instruction cache
— 8 Kbyte write-back data cache
— Maps 4 Kbyte, 8 Kbyte, or 1 Mbyte
— 8-entry, between 1 and 16 bytes each
— 4-entry, 1, 4, or 8 words
ROM (SMROM), Flash, SRAM,
SRAM-like variable latency I/O,
DRAM, and synchronous DRAM
(SDRAM)
Brief Datasheet
Order Number:
278241-005
April 2000

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gds1110bb Summary of contents

Page 1

Intel StrongARM* SA-1110 Microprocessor Product Features ® The Intel StrongARM SA-1110 Microprocessor (SA-1110 device optimized for meeting portable and embedded application requirements. The SA-1110 incorporates a 32-bit StrongARM RISC processor capable of running 206 ...

Page 2

... Copies of documents which have an ordering number and are referenced in this document, or other Intel literature may be obtained by calling 1-800- 548-4725 or by visiting Intel’s website at http://www.intel.com. Copyright © Intel Corporation, 2000 *Other brands and names are the property of their respective owners. ...

Page 3

For embedded applications, the SA-1110 offers high-performance computing at consumer electronics pricing with MIPS-per-dollar and MIPS-per-watt advantages. The SA-1110 delivers in price/performance and power/performance, making it a chice for portable and embedded applications. The SA-1110 differs from ...

Page 4

SA-1110 The reset controller manages the various reset sources within the SA-1110 and provides the ability to invoke a software reset. In addition, the reset controller tracks the cause of the last known reset, whether a hard reset, soft reset, ...

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RAM may be bypassed and frame buffer data passes directly to the dither logic. If 16-bit data is required, both the palette RAM and the dither logic are bypassed, and data is sent directly to the LCD ...

Page 6

SA-1110 ® Intel StrongARM SA-1110 Power/Performance Benefits The SA-1110 continues the StrongARM family of low-power performance. The SA-1110 takes advantage of a 2.0-V nominal process technology. For processors running at 133 MHz, the SA-1110 allows the core voltage to run ...

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Figure 1. Block Diagram of the SA-1110 PLL1 3.686 OSC MHz PLL2 32.768 OSC KHz RTC OS Timer General- Purpose I/O Interrupt Controller Power Management Reset Controller Serial Channel 0 UDC SA-1110 Brief Datasheet Instructions PC Icache IMMU (16 Kbytes) ...

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... min min 70 C (158 F) max (158 F) max. – +125 C – +125 C (– +257 F) (– +257 F) 256 mBGA 256 mBGA .35 µm, 3-layer metal .35 µm, 3-layer metal 2.5 million 2.5 million GDS1110AB GDS1110BB 206MHz SA-1110 Brief Datasheet ...

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