k4x51163pc Samsung Semiconductor, Inc., k4x51163pc Datasheet - Page 9
k4x51163pc
Manufacturer Part Number
k4x51163pc
Description
32m X16 Mobile-ddr Sdram
Manufacturer
Samsung Semiconductor, Inc.
Datasheet
1.K4X51163PC.pdf
(23 pages)
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Internal Temperature Compensated Self Refresh (TCSR)
Partial Array Self Refresh (PASR)
K4X51163PC - L(F)E/G
Note :
1. In order to save power consumption, Mobile-DDR SDRAM includes PASR option.
2. Mobile-DDR SDRAM supports three kinds of PASR in self refresh mode; Full array, 1/2 Array, 1/4 Array.
Note :
1. In order to save power consumption, Mobile DDR SDRAM includes the internal temperature sensor and control units to control the
2. If the EMRS for external TCSR is issued by the controller, this EMRS code for TCSR is ignored.
3. It has +/- 5 °C tolerance.
self refresh cycle automatically according to the three temperature ranges ; 45 °C and 85 °C.
Temperature Range
BA1=0
BA0=0
BA1=1
BA0=0
45 °C
- Full Array
85 °C
*3
BA1=0
BA0=1
BA1=1
BA0=1
Full Array
300
600
Figure.4 EMRS code and TCSR , PASR
1/2 Array
BA1=0
BA0=0
BA1=1
BA0=0
270
500
- E
- 1/2 Array
Self Refresh Current (IDD6)
BA1=0
BA0=1
BA1=1
BA0=1
1/4 Array
255
450
Full Array
250
500
1/2 Array
Mobile-DDR SDRAM
BA1=0
BA0=0
BA1=1
BA0=0
220
400
- G
- 1/4 Array
Partial Self Refresh Area
1/4 Array
BA1=0
BA0=1
BA1=1
BA0=1
205
350
February 2006
Unit
uA