APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 2

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

DYNAMIC CHARACTERISTICS
THERMAL AND MECHANICAL CHARACTERISTICS
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction temperature.
2 For Combi devices, I
3 See MIL-STD-750 Method 3471.
4 E
5 E
6 E
7 R
8 Continuous current limited by package lead temperature.
Symbol
Symbol
SSOA
V
t
t
t
t
R
R
adding to the IGBT turn-on loss. Tested in inductive switching test circuit shown in fi gure 21, but with a Silicon Carbide diode.
loss. (See Figures 21, 22.)
C
E
E
E
E
C
C
Q
Q
d(on)
d(off)
E
d(on)
d(off)
E
W
Q
GEP
on1
on2
off
G
on1
on2
on1
on2
θ
θ
oes
t
t
t
t
res
ies
ge
off
off
gc
r
r
f
f
JC
JC
g
T
is external gate resistance, not including R
is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
is the clamped inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current
is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate-to-Emitter Plateau Voltage
Total Gate Charge
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Switching Safe Operating Area
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Turn-on Delay Time
Current Rise Time
Turn-off Delay Time
Current Fall Time
Turn-on Switching Energy
Turn-on Switching Energy (Diode)
Turn-off Switching Energy
Characteristic
Junction to Case (IGBT)
Junction to Case (DIODE)
Package Weight
ces
includes both IGBT and FRED leakages
3
6
6
4
4
4
G(int)
55
5
nor gate driver impedance.
T
15V, L = 100μH, V
Inductive Switching (125°C)
J
Inductive Switching (25°C)
= 150°C, R
V
GE
Test Conditions
Capacitance
Gate Charge
= 0V, V
T
V
V
R
V
R
T
V
V
V
f = 1 MHz
J
CC
CC
CE
G
G
I
I
J
I
GE
GE
GE
C
C
C
= +125°C
= +25°C
= 4.7Ω
= 4.7Ω
= 50A
= 50A
= 50A
= 600V
G
= 800V
= 800V
= 15V
= 15V
= 15V
= 1.0Ω
CE
CE
= 25V
7
7
= 1200V
7
, V
GE
=
MIN
150
MIN
APT50GT120B2RDL(G)
2500
3585
4835
1910
3580
6970
2750
TYP
250
155
240
215
255
110
TYP
7.5
5.9
20
23
50
26
23
50
50
MAX
MAX
.18
.61
UNIT
UNIT
°C/W
nC
pF
μ
μ
gm
ns
ns
V
A
J
J