APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 3

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

TYPICAL PERFORMANCE CURVES
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
FIGURE 7, Threshold Voltage vs Junction Temperature
FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
150
125
100
100
150
125
75
50
25
75
50
25
6
5
4
3
2
1
0
-.50 -.25
0
0
FIGURE 1, Output Characteristics (T
8
V
0
0
CE
V
GE
TEST<0.5 % DUTY
<0.5 % DUTY CYCLE
V
250μs PULSE TEST
, COLLECTOR-TO-EMITTER VOLTAGE (V)
V
FIGURE 3, Transfer Characteristics
250μs PULSE
CE
= 15V
9
1
GE
2
T
T
CYCLE
T
, GATE-TO-EMITTER VOLTAGE (V)
T
J
, GATE-TO-EMITTER VOLTAGE (V)
J
J
= 25°C.
J
= 125°C
= 125°C
, JUNCTION TEMPERATURE
10
0
2
4
T
T
J
J
T
= 55°C
T
= 25°C
11
25
J
3
J
= 25°C
= -55°C
6
12
50
4
I
I
C
I
C
8
C
13
= 50A
= 25A
75
5
= 100A
T
J
10
= 150°C
100 125
14
6
J
12
15
7
= 25°C)
16
150
14
8
150
100
125
100
FIGURE 8, DC Collector Current vs Case Temperature
FIGURE 6, On State Voltage vs Junction Temperature
25
75
50
16
14
12
10
80
60
40
20
0
7
6
5
4
3
2
1
0
8
6
4
2
0
0
FIGURE 2, Output Characteristics (T
V
25
25
0
0
CE
<0.5 % DUTY CYCLE
T
250μs PULSE TEST
I
, COLLECTOR-TO-EMITTER VOLTAGE (V)
C
J
I
C
= 25°C
= 50A
50
= 100A
15V
V
5
GE
50
50
= 15V.
T
T
J
100
, Junction Temperature (°C)
C
FIGURE 4, Gate charge
13V
, Case Temperature (°C)
I
10
GATE CHARGE (nC)
C
= 50A
75
75
150
15
V
V
CE
CE
APT50GT120B2RDL(G)
200
100
= 600V
100
= 240V
I
C
20
= 25A
250
11V
V
125
125
CE
10V
25
300
J
= 960V
9V
= 25°C)
6V
8V
7V
350
150
30
150