APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 7

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

TYPICAL PERFORMANCE CURVES
MAXIMUM RATINGS
STATIC ELECTRICAL CHARACTERISTICS
DYNAMIC CHARACTERISTICS
I
Symbol
Symbol
Symbol
F
I
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
F
(RMS)
I
I
I
I
RRM
RRM
RRM
FSM
Q
Q
Q
(AV)
V
t
t
t
t
rr
rr
rr
rr
F
rr
rr
rr
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Characteristic / Test Conditions
Maximum Average Forward Current (T
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (T
Characteristic / Test Conditions
Forward Voltage
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10
FIGURE 24a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
-5
0.5
0.05
0.7
0.3
0.9
0.1
10
-4
I
F
= 1A, di
SINGLE PULSE
F
RECTANGULAR PULSE DURATION (seconds)
/dt = -100A/μs, V
C
10
= 145°C, Duty Cycle = 0.5)
J
-3
= 45°C, 8.3ms)
I
I
I
I
F
F
F
I
F
I
F
F
= 30A
= 60A
= 30A, T
V
= 30A, di
V
= 30A, di
V
=30A, di
R
R
R
Test Conditions
= 800V, T
= 800V, T
= 800V, T
R
J
= 125°C
F
= 30V, T
F
F
/dt = -1000A/μs
All Ratings: T
/dt = -200A/μs
/dt = -200A/μs
10
C
C
-2
C
= 125°C
= 125°C
= 25°C
J
= 25°C
C
Note:
Peak T J = P DM x Z θJC + T C
= 25°C unless otherwise specifi ed.
10
APT50GT120B2RDL(G)
Duty Factor D =
MIN
MIN
-1
-
-
-
-
-
-
-
-
-
-
t 1
t 2
APT50GT120B2RDL(G)
2694
3459
4646
TYP
TYP
592
389
165
1.6
2.0
1.6
61
15
44
30
81
60
9
t 1
/
t 2
1.0
MAX
MAX
2.1
-
-
Amps
Amps
UNIT
Amps
Amps
UNIT
Volts
UNIT
nC
nC
nC
ns
ns
ns