APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 5

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

TYPICAL PERFORMANCE CURVES
Figure 17, Capacitance vs Collector-To-Emitter Voltage
4,000
1,000
0.20
0.16
0.12
0.08
0.04
500
100
140
Figure 20, Operating Frequency vs Collector Current
V
50
10
CE
0
4
10
10 20
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
T
T
D = 50 %
V
R
-5
J
C
CE
G
= 125
= 75
= 5Ω
= 800V
D = 0.9
°
°
I
C
10
C
C
30
, COLLECTOR CURRENT (A)
0.5
0.3
0.05
0.7
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
40
20
50
10
60
30
-4
70
80
40
RECTANGULAR PULSE DURATION (SECONDS)
C
C
C
90 100
ies
oes
res
50
SINGLE PULSE
F
f
f
P
10
max1
max2
max
diss
-3
=
= min (f
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
+ t
max
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
10
160
140
120
100
Figure 18,Minimim Switching Safe Operating Area
-2
80
60
40
20
f
0
0
V
CE
200
, COLLECTOR TO EMITTER VOLTAGE
400
Note:
Peak T J = P DM x Z θJC + T C
600
10
Duty Factor D =
-1
800 1000 1200 1400
t 1
APT50GT120B2RDL(G)
t 2
t 1
/
t 2
1.0