APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 8

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

FIGURE 4, Reverse Recovery Charge vs. Current Rate of Change
FIGURE 6, Dynamic Parameters vs Junction Temperature
7000
6000
5000
4000
3000
2000
1000
1400
1200
1000
100
800
600
400
200
1.2
0.8
0.6
0.4
0.2
1.0
FIGURE 8, Junction Capacitance vs. Reverse Voltage
80
60
40
20
0
0
0
FIGURE 2, Forward Current vs. Forward Voltage
0
0
0
0
-di
1
T
V
V
J
F
R
I
F
/dt, CURRENT RATE OF CHANGE (A/μs)
RRM
Q
= 125°C
T
t
= 800V
, ANODE-TO-CATHODE VOLTAGE (V)
RR
J
RR
T
, JUNCTION TEMPERATURE (°C)
200
0.5
25
J
= 125°C
T
T
V
J
= 25°C
J
R
= 55°C
, REVERSE VOLTAGE (V)
50
10
1
400
1.5
75
600
100
100
2
T
J
800
= 150°C
125
2.5
60A
15A
30A
1000
150
800
3
FIGURE 5, Reverse Recovery Current vs. Current Rate of Change
FIGURE 7, Maximum Average Forward Current vs. Case Temperature
FIGURE 3, Reverse Recovery Time vs. Current Rate of Change
500
450
400
350
300
250
200
150
100
100
70
60
50
40
30
20
10
50
90
80
70
60
50
40
30
20
10
0
0
0
0
0
-di
-di
25
F
T
V
F
/dt, CURRENT RATE OF CHANGE (A/μs)
J
R
/dt, CURRENT RATE OF CHANGE (A/μs)
60A
30A
= 125°C
15A
= 800V
Duty cycle = 0.5
200
T
200
J
= 45°C
50
Case Temperature (°C)
400
400
75
30A
600
60
100
APT50GT120B2RDL(G)
60A
800
800
T
V
125
J
R
= 125°C
= 800V
15A
1000
1000
150