APT50GT120B2RDL MICROSEMI [Microsemi Corporation], APT50GT120B2RDL Datasheet - Page 4

• Manufacturer Part Number: APT50GT120B2RDL
• Description: Resonant Mode IGBT
• Manufacturer: MICROSEMI [Microsemi Corporation]

FIGURE 15, Switching Energy Losses vs. Gate Resistance
25,000
20,000
15,000
10,000
60,000
50,000
40,000
30,000
20,000
10,000
5,000
FIGURE 13, Turn-On Energy Loss vs Collector Current
160
140
120
100
FIGURE 9, Turn-On Delay Time vs Collector Current
FIGURE 11, Current Rise Time vs Collector Current
35
30
25
20
15
10
80
60
40
20
5
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
V
V
T
E
V
V
R
V
T
R
L = 100μH
, COLLECTOR TO EMITTER CURRENT (A)
R
, COLLECTOR TO EMITTER CURRENT (A)
J
CE
GE
CE
GE
G
on2,
J
CE
G
, COLLECTOR TO EMITTER CURRENT (A)
G
= 125°C
= 25°C
= 5Ω
= 5Ω
= 800V
= 800V
= +15V
= +15V
= 800V
=
50A
R
5Ω, L
G
30
30
30
10
, GATE RESISTANCE (OHMS)
,
or 125°C
=
V
T
100
J
GE
=
50
20
μ
50
50
125°C
= 15V
T
H, V
J
E
=
off,
CE
25 or 125°C,V
50A
T
=
J
=
70
30
70
70
800V
25°C
E
on2,
E
on2,
25A
GE
100A
90
90
40
90
=
E
E
off,
off,
15V
100A
25A
110
110
110
50
FIGURE 16, Switching Energy Losses vs Junction Temperature
25,000
20,000
15,000
10,000
5,000
FIGURE 14, Turn Off Energy Loss vs Collector Current
6000
5000
4000
3000
2000
1000
FIGURE 10, Turn-Off Delay Time vs Collector Current
300
250
200
150
100
FIGURE 12, Current Fall Time vs Collector Current
50
60
50
40
30
20
10
0
0
0
0
I
I
10
CE
10
CE
10
I
0
CE
V
V
R
V
V
R
V
R
L = 100μH
E
, COLLECTOR TO EMITTER CURRENT (A)
, COLLECTOR TO EMITTER CURRENT (A)
CE
GE
G
CE
GE
G
, COLLECTOR TO EMITTER CURRENT (A)
CE
off,
G
T
V
= 5Ω
= 5Ω
J
=
= 800V
T
GE
= 800V
= +15V
= +15V
50A
=
=
J
5Ω
, JUNCTION TEMPERATURE (°C)
800V
=15V,T
25°C, V
30
30
30
25
T
E
J
on2,
=
J
125°C, V
T
GE
=125°C
50A
J
R
=
=
50
50
G
50
50
125°C
15V
=
V
GE
5Ω, L
GE
E
=15V,T
on2,
=
T
15V
=
70
70
70
75
J
100A
APT50GT120B2RDL(G)
100
E
=
E
on2,
J
off,
25°C
=25°C
μ
25A
H, V
25A
100
90
90
90
CE
E
=
off,
800V
100A
110
110
110
125