STE30NK90Z_06 STMICROELECTRONICS [STMicroelectronics], STE30NK90Z_06 Datasheet - Page 3

• Manufacturer Part Number: STE30NK90Z_06
• Description: N-channel 900V - 0.21? - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STE30NK90Z
1
Electrical ratings
Table 1.
1. Pulse width limited by safe operating area.
2. I
Table 2.
Table 3.
Rthj-case Thermal resistance junction-case max
Rthj-amb
Symbol
V
SD
E
I
Symbol
dv/dt
AR
ESD(G-S)
AS
I
V
V
DM
V
V
T
≤ 28A, di/dt ≤ 200A/µs, V
P
DGR
I
I
T
ISO
GS
DS
stg
D
D
tot
j
(1)
(2)
Avalanche current, repetitive or not-repetitive
(pulse width limited by T
Single pulse avalanche energy
(starting T
Thermal resistance junction-ambient max
Absolute maximum ratings
Thermal data
Avalanche characteristics
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating Factor
Gate source ESD(HBM-C=100pF, R=1.5KW)
Peak diode recovery voltage slope
Insulation withstand voltage (AC-RMS) from all
four terminals to external heatsink
Storage temperature
Max. operating junction temperature
j
= 25 °C, I
DD
≤ V
Parameter
(BR)DSS
D
= I
Parameter
j
Max)
AR
C
,
GS
= 25°C
, V
GS
= 20 kΩ)
DD
= 0)
= 35 V)
C
C
= 25°C
= 100°C
-65 to 150
Max Value
Value
2500
± 30
900
900
112
500
4.3
6.5
4.5
28
18
0.23
500
40
13
Electrical ratings
W/°C
Unit
V/ns
KV
°C
W
V
V
V
A
A
A
V
°C/W
°C/W
Unit
mJ
A
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