STE30NK90Z_06 STMICROELECTRONICS [STMicroelectronics], STE30NK90Z_06 Datasheet - Page 4

• Manufacturer Part Number: STE30NK90Z_06
• Description: N-channel 900V - 0.21? - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

Electrical characteristics
2
4/13
Electrical characteristics
(T
Table 4.
Table 5.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C
C
V
Symbol
Symbol
CASE
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
g
t
t
I
I
C
DS(on)
GS(th)
C
C
d(on)
d(off)
Q
Q
DSS
GSS
Q
fs
oss eq.
oss
t
t
rss
iss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
(2)
is defined as a constant equivalent capacitance giving the same charging time as C
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
Forward
transconductance
Input capacitance
output capacitance
reverse transfer
capacitance
Equivalent output
capacitance
Turn-on delay time
rise time
turn-off delay time
fall time
Total gate charge
gate-source charge
gate-drain charge
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
DSS
GS
= 0)
I
V
V
T
V
V
V
V
V
V
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
DS
DS
GS
GS
DS
DD
DD
GS
G
= 1 mA, V
= 125 °C
= 4.7Ω V
= Max Rating
= Max Rating,
= ± 20V
= V
= 10V, I
= 15 V
= 25V, f = 1 MHz,
= 0
= 0V,
= 0V to 720 V
= 10V
= 450 V, I
= 720 V, I
Figure
Figure
Test conditions
Test conditions
GS
, I
,
14)
15)
I
D
GS
GS
D
D
= 14 A
D
D
= 150 µA
= 14 A
= 10 V
= 0
= 13 A
= 26 A,
Min.
Min.
900
3
12000
Typ.
Typ.
3.75
0.21
852
166
377
250
350
190
26
67
59
72
51
oss
STE30NK90Z
Max.
±100
Max.
0.26
100
490
when V
4.5
10
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
ns
ns
ns
ns
V
V
Ω
S