STE30NK90Z_06 STMICROELECTRONICS [STMicroelectronics], STE30NK90Z_06 Datasheet - Page 5

• Manufacturer Part Number: STE30NK90Z_06
• Description: N-channel 900V - 0.21? - 28A ISOTOP Zener-Protected SuperMESTM MOSFET
• Manufacturer: STMICROELECTRONICS [STMicroelectronics]

STE30NK90Z
2.1
Table 6.
1. Pulse width limited by safe operating area%
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5
Table 7.
Protection features of gate-to-source zener diodes
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
RRM
RRM
I
SD
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Source-drain current
Source-drain current
(pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Gate-source breakdown
voltage
Source drain diode
Gate-source zener diode
Parameter
Parameter
Igs=± 1mA (Open
Drain)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
Test conditions
DD
DD
= 28 A, V
= 26 A, di/dt = 100 A/µs
= 26 A, di/dt = 100 A/µs
= 100 V, T
= 100 V, T
Test conditions
GS
j
j
= 25°C
= 150°C
= 0
Min.
30
Min.
Electrical characteristics
Typ.
Typ.
18.9
36.6
1.33
25.2
37.8
1
Max.
Max.
112
28
2
Unit
Unit
µC
µC
µs
µs
A
A
V
A
A
V
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