SST45VF010-10-4C-SA SST [Silicon Storage Technology, Inc], SST45VF010-10-4C-SA Datasheet - Page 5

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SST45VF010-10-4C-SA

Manufacturer Part Number
SST45VF010-10-4C-SA
Description
512 Kbit / 1 Mbit / 2 Mbit Serial Flash
Manufacturer
SST [Silicon Storage Technology, Inc]
Datasheet
512 Kbit / 1 Mbit / 2 Mbit Serial Flash
SST45VF512 / SST45VF010 / SST45VF020
Advance Information
O
© 2000 Silicon Storage Technology, Inc.
Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute maximum Stress
Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device
at these conditions or conditions greater than those defined in the operational sections of this data sheet is not implied.
Exposure to absolute maximum stress rating conditions may affect device reliability.)
Temperature Under Bias ................................................................................................................. -55°C to +125°C
Storage Temperature ...................................................................................................................... -65°C to +150°C
D. C. Voltage on Any Pin to Ground Potential ............................................................................ -0.5V to V
Transient Voltage (<20 ns) on Any Pin to Ground Potential ........................................................ -1.0V to V
Package Power Dissipation Capability (Ta = 25°C) ........................................................................................... 1.0W
Surface Mount Lead Soldering Temperature (3 Seconds) ............................................................................... 240°C
Output Short Circuit Current
T
Note: 1. Outputs shorted for no more than one second. No more than one output shorted at a time.
Range
Commercial
Symbol Parameter
ABLE
PERATING
V
V
V
V
I
I
I
V
DD
I
I
SB
LO
IHC
OH
LI
IL
OL
IH
IL
2. This parameter only applies to WP# and RESET# pins.
5: DC O
R
Power Supply Current
Read
Program and Erase
Standby Current
Input Leakage Current
Output Leakage Current
Input Low Current
Input Low Voltage
Input High Voltage
Input High Voltage (CMOS) V
Output Low Voltage
Output High Voltage
ANGE
PERATING
Ambient Temp
0 °C to +70 °C
C
HARACTERISTICS
1 ...................................................................................................................................................................
(2)
V
V
2.7-3.6V
0.7 V
V
DD
DD
DD
DD
Min
= 2.7-3.6V
-0.3
-0.2
DD
Limits
Max
360
0.8
0.2
20
30
15
1
1
5
Units
mA
mA
AC C
µA
µA
µA
µA
Input Rise/Fall Time ......... 5 ns
Output Load ..................... C
See Figures 2 and 3
V
V
V
V
V
ONDITIONS OF
Test Conditions
f = 10 MHz
CE# = V
CE# = V
CE# = V
V
V
WP#, RESET# = GND
V
V
V
I
I
OL
OH
IN
OUT
DD
DD
DD
= 100 µA, V
= -100 µA, V
=GND to V
= V
= V
= V
=GND to V
DD
DD
DD
IL
IL
IHC
, V
, V
T
Min.
Max.
Max.
, V
EST
DD
DD
DD
DD
DD
= V
= V
DD
DD
= V
, V
= V
DD
DD
, V
= V
DD
DD
DD
L
DD
Max.
Max.
DD
= V
= 30 pF
Max.
= V
Min.
Min.
DD
DD
S71178
Max.
Max.
DD
DD
514 PGM T5.2
514-1 10/00
+ 1.0V
+ 0.5V
50 mA
5
6
7
8
13
14
15
16
1
2
3
4
9
10
11
12

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