2SK1618 HITACHI [Hitachi Semiconductor], 2SK1618 Datasheet
2SK1618
Available stocks
Related parts for 2SK1618
2SK1618 Summary of contents
Page 1
... Silicon N-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline LDPAK Gate 2. Drain 3. Source 4. Drain ...
Page 2
... Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes duty cycle 2. Value Symbol ...
Page 3
... V — 0.9 — — 220 — rr 2SK1618(L), 2SK1618(S) Unit Test conditions mA 100 500 mA ...
Page 4
... Power vs. Temperature Derating Case Temperature 1.0 0.5 0.3 0.2 0.1 0.1 0.03 0.01 10 100 4 0.05 0.02 0.01 100 150 (°C) C Normalized Transient Thermal Impedance vs. Pulse Width Pulse Width PW (s) Maximum Safe Operation Area 0.5 0.2 0 25° 100 Drain to Source Voltage 25° ...
Page 5
Hitachi Code LDPAK (L) JEDEC — EIAJ — Weight (reference value) 1.4 g Unit: mm ...
Page 6
Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...