2SJ319S HITACHI [Hitachi Semiconductor], 2SJ319S Datasheet
2SJ319S
Related parts for 2SJ319S
2SJ319S Summary of contents
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Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline DPAK ...
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Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
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Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –5 –10 V –8 V Pulse Test –4 –3 –2 – –3 –4 –8 –12 Drain ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage –20 –16 –12 –8 –4 0 –4 –8 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature –5 A ...
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Body–Drain Diode Reverse Recovery Time 500 200 100 50 20 di/ A/µ duty < °C 5 –0.05 –0.1 –0.2 –0.5 –1 Reverse Drain Current Dynamic Input Characteristics –50 ...
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Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ 6 Reverse Drain Current vs. Source to Drain Voltage –5 Pulse Test –4 –3 –2 –10 V ...
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Switching Time Test Circuit Vout Vin Monitor Monitor D.U. Vin – -10 V 2SJ319(L), 2SJ319(S) Waveforms Vin 10% 90% 10% Vout td(off) td(on) tr 90% 90% 10 ...
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Hitachi Code DPAK (L)-(1) JEDEC — EIAJ Conforms Weight (reference value) 0.42 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...