2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet
2SJ387S
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2SJ387S Summary of contents
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Silicon P-Channel MOS FET Application High speed power switching Features Low on-resistance Low drive current 2.5 V Gate drive device can be driven from 3 V Source Suitable for Switching regulator converter Outline DPAK-2 4 ...
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Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes ...
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Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current I Gate to source cutoff voltage Static drain to source on state resistance Forward ...
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Power vs. Temperature Derating 100 Case Temperature Typical Output Characteristics –20 –10 V –16 –5 V –4 V –12 –8 – –2 –4 Drain to Source Voltage 4 –100 ...
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Drain to Source Saturation Voltage vs. Gate to Source Voltage –0.5 –0.4 –0 – –0.2 –0.1 0 –2 –4 –6 Gate to Source Voltage Static Drain to Source on State Resistance vs. Temperature 0.2 Pulse Test ...
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Body to Drain Diode Reverse Recovery Time 1000 500 200 100 –0.1 –0.3 –1 –3 Reverse Drain Current Dynamic ...
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Source to Drain Voltage Normalized Transient Thermal Impedance vs. Pulse Width 0.5 0.3 0.1 0.03 0.01 10 µ 100 µ Reverse Drain Current vs. Source to Drain Voltage Pulse ...
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Switching Time Test Circuit Vin Monitor D.U.T. Vin 50 – Vout Vin Monitor 10 –10 V Vout td(on) Waveforms 90% 90% 90% 10% 10% td(off ...
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Hitachi Code DPAK (L)-(2) JEDEC — EIAJ — Weight (reference value) 0.42 g Unit: mm ...
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Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise ...