2SJ280L HITACHI [Hitachi Semiconductor], 2SJ280L Datasheet
2SJ280L
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2SJ280L Summary of contents
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L Silicon P Channel MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • gate drive device can be driven from 5 V source • ...
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L , 2SJ280 S Table 2 Electrical Characteristics (Ta = 25°C) Item Symbol ——————————————————————————————————————————— Drain to source breakdown V (BR)DSS voltage ——————————————————————————————————————————— Gate to source breakdown V (BR)GSS voltage ——————————————————————————————————————————— Gate to source leak current I GSS ——————————————————————————————————————————— Zero ...
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Power vs. Temperature Derating 100 Case Temperature Tc (°C) Typical Output Characteristics –50 –10 V –6 V –4 V –40 –3 V –3.5 V –30 –20 –2.5 V – – ...
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L , 2SJ280 S Drain-Source Saturation Voltage vs. Gate-Source Voltage –2.0 Pulse Test –1.6 –1 – –0.8 –0.4 0 –2 –4 –6 Gate to Source Voltage V Static Drain-Source on State Resistance vs. Temperature 0.1 ...
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Body-Drain Diode Reverse Recovery Time 500 200 100 50 di/ 25° –1 –2 –5 –10 –20 –50 –100 Reverse Drain Current I (A) DR Dynamic Input Characteristics ...
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L , 2SJ280 S Reverse Drain Current vs. Source to Drain Voltage –50 Pulse Test – – –30 –20 – – –0.4 –0.8 –1.2 –1.6 Source to Drain Voltage V ...
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Silicon P-Channel MOS FET Application High speed power switching Features • Low on–resistance • High speed switching • Low drive current • gate drive device can be driven from 5 V source • Suitable for Switching regulator, ...