2SJ387S HITACHI [Hitachi Semiconductor], 2SJ387S Datasheet - Page 4

• Manufacturer Part Number: 2SJ387S
• Description: Silicon P-Channel MOS FET
• Manufacturer: HITACHI [Hitachi Semiconductor]

2SJ387(L), 2SJ387(S)
4
40
30
20
10
–20
–16
–12
–8
–4
0
0
Drain to Source Voltage
Power vs. Temperature Derating
Case Temperature
Typical Output Characteristics
–10 V
–4 V
–2
50
–5 V
–4
100
V
GS
–6
= –1.5 V
–2.5 V
Tc (°C)
–2 V
150
Pulse Test
V
–8
DS
(V)
200
–10
–100
–0.3
–0.1
–10
–30
–10
–8
–6
–4
–2
–3
–1
–0.5
0
Operation in
this area is
limited by R
Gate to Source Voltage
Drain to Source Voltage
Ta = 25 °C
Typical Transfer Characteristics
Maximum Safe Operation Area
–1
–1
–2
DS(on)
–2
Tc = –25 °C
–5
25 °C
75 °C
–3
–10 –20
100 µs
V
Pulse Test
10 µs
DS
V
V
GS
= –10 V
–4
DS
(V)
(V)
–50
–5