MRF6V4300NR1_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V4300NR1_10 Datasheet - Page 14

• Manufacturer Part Number: MRF6V4300NR1_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

14
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
• Electromigration MTTF Calculator
• RF High Power Model
For Software, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software &
Tools tab on the part’s Product Summary page to download the respective tool.
MRF6V4300NR1 MRF6V4300NBR1
Revision
Refer to the following documents to aid your design process.
The following table summarizes revisions to this document.
0
1
2
3
Oct. 2008
Mar. 2009
July 2008
Apr. 2010
Date
• Initial Release of Data Sheet
• Added Fig. 13, MTTF versus Junction Temperature, p. 6
• Corrected Z
• Operating Junction Temperature increased from 200°C to 225°C in Maximum Ratings table, related
• Added Electromigration MTTF Calculator and RF High Power Model availability to Product Software,
Equivalent Source and Load Impedance data table and replotted data, p. 7
“Continuous use at maximum temperature will affect MTTF” footnote added and changed 200°C to 225°C
in Capable Plastic Package bullet, p. 1
p. 14
PRODUCT DOCUMENTATION AND SOFTWARE
source
, “0.40 + j5.93” to “0.39 + j1.26” and Z
REVISION HISTORY
Description
load
, “1.42 + j5.5” to “1.27 + j0.96” in Fig. 14, Series
Freescale Semiconductor
RF Device Data