MRF6V4300NR1_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V4300NR1_10 Datasheet - Page 5

• Manufacturer Part Number: MRF6V4300NR1_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

RF Device Data
Freescale Semiconductor
1000
10
100
9
8
7
6
5
4
3
2
1
0
10
Figure 4. Capacitance versus Drain- -Source Voltage
Figure 6. DC Drain Current versus Drain Voltage
1
0
--10
--15
--20
--25
--30
--35
--40
--45
--50
--55
--60
0
--5
0
10
Figure 8. Third Order Intermodulation Distortion
1125 mA
1350 mA
650 mA
V
Two--Tone Measurements, 100 kHz Tone Spacing
900 mA
DD
20
I
= 50 Vdc, f1 = 450 MHz, f2 = 450.1 MHz
DQ
10
V
= 450 mA
C
DS
C
C
oss
iss
rss
, DRAIN--SOURCE VOLTAGE (VOLTS)
DRAIN VOLTAGE (VOLTS)
P
40
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
Measured with ±30 mV(rms)ac @ 1 MHz
V
20
GS
= 0 Vdc
60
2.5 V
30
100
80
2.63 V
TYPICAL CHARACTERISTICS
V
GS
100
40
2.75 V
= 3 V
2.25 V
120
50
600
60
59
58
57
56
55
54
53
52
51
50
23
22
21
20
19
18
100
10
28
10
1
Figure 9. CW Output Power versus Input Power
900 mA
1
Figure 7. CW Power Gain versus Output Power
I
DQ
450 mA
29
= 1350 mA
T
C
= 25°C
P1dB = 55.15 dBm (327 W)
Figure 5. DC Safe Operating Area
30
1125 mA
V
DS
P
650 mA
P3dB = 56.06 dBm (403 W)
out
, DRAIN--SOURCE VOLTAGE (VOLTS)
31
, OUTPUT POWER (WATTS) CW
P
in
MRF6V4300NR1 MRF6V4300NBR1
, INPUT POWER (dBm)
32
10
33
100
V
f = 450 MHz
DD
34
V
f = 450 MHz
= 50 Vdc, I
DD
= 50 Vdc
35
DQ
36
= 900 mA
Ideal
100
Actual
37
600
38
5