MRF6V4300NR1_10 FREESCALE [Freescale Semiconductor, Inc], MRF6V4300NR1_10 Datasheet - Page 6

• Manufacturer Part Number: MRF6V4300NR1_10
• Description: RF Power Field Effect Transistors N--Channel Enhancement--Mode Lateral MOSFETs
• Manufacturer: FREESCALE [Freescale Semiconductor, Inc]

6
MRF6V4300NR1 MRF6V4300NBR1
23
22
21
20
19
18
17
16
25
24
23
22
21
20
19
18
10
0
G
Figure 10. Power Gain versus Output Power
ps
Figure 12. Power Gain and Drain Efficiency
V
DD
50
= 20 V
η
100
25 V
P
25_C
D
P
versus CW Output Power
85_C
out
T
out
C
, OUTPUT POWER (WATTS) CW
, OUTPUT POWER (WATTS) CW
= --30_C
150
30 V
200
35 V
100
85_C
250
V
f = 450 MHz
I
40 V
DQ
DD
= 50 Vdc
= 900 mA
25_C
300
--30_C
TYPICAL CHARACTERISTICS
45 V
I
f = 450 MHz
DQ
= 900 mA
350
50 V
400
500
80
70
60
50
40
30
20
10
10
10
10
10
60
55
50
45
40
35
8
7
6
5
90
15
Figure 13. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. Power Output versus Power Input
110
20
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 50 Vdc, P
P
150
in
, INPUT POWER (dBm)
25
out
170
= 300 W, and η
25_C
Freescale Semiconductor
30
190
T
C
= --30_C
85_C
D
210
V
I
f = 450 MHz
RF Device Data
= 60%.
DQ
DD
= 900 mA
35
= 50 Vdc
230
250
40