ATP213_12 SANYO [Sanyo Semicon Device], ATP213_12 Datasheet
ATP213_12
Related parts for ATP213_12
ATP213_12 Summary of contents
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Ordering number : ENA1526A ATP213 Features Low ON-resistance • 4V drive • Halogen free compliance • Specifi cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (PW≤10μs) Allowable Power Dissipation Channel Temperature Storage ...
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Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall ...
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Tc=25 ° Single pulse 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Drain-to-Source Voltage (on ...
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=30V =50A Total Gate Charge ...
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Taping Specifi cation ATP213-TL-H ATP213 No. A1526-5/7 ...
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Outline Drawing ATP213-TL-H ATP213 Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.5 1.5 2.3 2.3 No. A1526-6/7 ...
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Note on usage : Since the ATP213 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", ...