SCH1330_0910 SANYO [Sanyo Semicon Device], SCH1330_0910 Datasheet

SCH1330_0910

Manufacturer Part Number

SCH1330_0910

Description

General-Purpose Switching Device Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.SCH1330_0910.pdf (4 pages)

Current page: 1 of 4
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Ordering number : ENA1460A

SCH1330

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : YF

Drain-to-Source Voltage

Gate-to-Source Voltage

Drain Current (DC)

Drain Current (Pulse)

Allowable Power Dissipation

Channel Temperature

Storage Temperature

Drain-to-Source Breakdown Voltage

Zero-Gate Voltage Drain Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

Static Drain-to-Source On-State Resistance

•

Low ON-resistance.

Ultrahigh-speed switching.

1.8V drive.

Halogen free compliance.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

V DSS

R DS (on)1

R DS (on)2

R DS (on)3

V GSS

I D

I DP

P D

Tch

Tstg

V (BR)DSS

I DSS

I GSS

V GS (off)

| yfs |

P-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

Symbol

www.semiconductor-sanyo.com/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (900mm

I D =--1mA, V GS =0V

V DS =--20V, V GS =0V

V GS =±8V, V DS =0V

V DS =--10V, I D =--1mA

V DS =--10V, I D =--750mA

I D =--750mA, V GS =--4.5V

I D =--300mA, V GS =--2.5V

I D =--100mA, V GS =--1.8V

SCH1330

Conditions

O1409 TK IM / 42809PE MS IM TC-00001930

×0.8mm)

DATA SHEET

min

--0.4

1.14

--20

Ratings

typ

Ratings

185

275

410

1.9

Continued on next page.

--55 to +150

max

--1.5

--1.4

--20

±10

150

241

385

615

--6

--1

No. A1460-1/4

Unit

mΩ

°C

μA

Related parts for SCH1330_0910

SCH1330_0910 Summary of contents

Page 1

Ordering number : ENA1460A SCH1330 Features Low ON-resistance. • Ultrahigh-speed switching. • 1.8V drive. • Halogen free compliance. • Speciﬁ cations Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation ...

Page 2

Continued from preceding page. Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Package Dimensions unit : mm (typ) 7028-002 ...

Page 3

R DS (on 700 600 --0.1A 500 --0.3A 400 --0.75A 300 200 100 0 0 --1 --2 --3 --4 --5 --6 --7 Gate-to-Source Voltage ...

Page 4

1.2 When mounted on ceramic substrate 2 ×0.8mm) (900mm 1.0 0.8 0.6 0.4 0 100 Ambient Temperature °C Note on usage : Since the SCH1330 is a MOSFET ...

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