EFC4612R_10 SANYO [Sanyo Semicon Device], EFC4612R_10 Datasheet

EFC4612R_10

Manufacturer Part Number

EFC4612R_10

Description

General-Purpose Switching Device Applications

Manufacturer

SANYO [Sanyo Semicon Device]

Datasheet

1.EFC4612R_10.pdf (5 pages)

Current page: 1 of 5
Download datasheet (273Kb)

Ordering number : ENA1477A

EFC4612R

Features

Speciﬁ cations

Absolute Maximum Ratings at Ta=25°C

Electrical Characteristics at Ta=25°C

Marking : FN

Source-to-Source Voltage

Gate-to-Source Voltage

Source Current (DC)

Source Current (Pulse)

Total Dissipation

Channel Temperature

Storage Temperature

Source-to-Source Breakdown Voltage

Zero-Gate Voltage Source Current

Gate-to-Source Leakage Current

Cutoff Voltage

Forward Transfer Admittance

•

2.5V drive.

Built-in gate protection resistor.

Best suited for LiB charging and discharging switch.

Common-drain type.

"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,

Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to

communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not

be intended for use for any "special application" (medical equipment whose purpose is to sustain life,

aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal

system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten

human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they

grant any guarantee thereof. If you should intend to use our products for applications outside the standard

applications of our customer who is considering such use and/or outside the scope of our intended standard

applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the

intended use, our customer shall be solely responsible for the use.

Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state, and are

not guarantees of the performance, characteristics, and functions of the described products as mounted in the

customer ' s products or equipment. To verify symptoms and states that cannot be evaluated in an

independent device, the customer should always evaluate and test devices mounted in the customer ' s

products or equipment.

Parameter

V SSS

V GSS

I S

I SP

P T

Tch

Tstg

V (BR)SSS

I SSS

I GSS

V GS (off)

| yfs |

Symbol

N-Channel Silicon MOSFET

General-Purpose Switching Device

Applications

http://semicon.sanyo.com/en/network

SANYO Semiconductors

PW≤10μs, duty cycle≤1%

When mounted on ceramic substrate (5000mm

I S =1mA, V GS =0V

V SS =20V, V GS =0V

V GS =±8V, V SS =0V

V SS =10V, I S =1mA

V SS =10V, I S =3A

EFC4612R

Conditions

10511 TKIM/O0709PF TKIM TC-00001996

Test Circuit 1

Test Circuit 2

Test Circuit 3

Test Circuit 4

×0.8mm)

DATA SHEET

min

0.5

Ratings

typ

Ratings

3.1

Continued on next page.

--55 to +150

max

±12

±10

150

1.6

1.3

No. A1477-1/5

Unit

°C

μA

Related parts for EFC4612R_10

EFC4612R_10 Summary of contents

Page 1

Ordering number : ENA1477A EFC4612R Features 2.5V drive. • Built-in gate protection resistor. • Best suited for LiB charging and discharging switch. • Common-drain type. • Speciﬁ cations Absolute Maximum Ratings at Ta=25°C Parameter Source-to-Source Voltage Gate-to-Source Voltage Source Current ...

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EFC4612R_10 datasheet download

EFC4612R_10 SANYO [Sanyo Semicon Device], EFC4612R_10 Datasheet

EFC4612R_10

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EFC4612R_10 Summary of contents

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