h8s-2138 Renesas Electronics Corporation., h8s-2138 Datasheet - Page 12

• Manufacturer Part Number: h8s-2138
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2100 Series
• Manufacturer: Renesas Electronics Corporation.

Rev. 4.00 Jun 06, 2006 page xii of liv
25.3.2 DC
Characteristics
Table 25.16 DC
Characteristics (3)
25.3.6 Flash Memory
Characteristics
Table 25.27 Flash
Memory Characteristics
(Programming/Erasing
Operating Range)
25.4.2 DC
Characteristics
Table 25.29 DC
Characteristics (1)
Table 25.29 DC
Characteristics (3)
25.5.2 DC
Characteristics
Table 25.40 DC
Characteristics (1)
Item
740
742
756
757
761
766
782
Page
Table 25.16 (3) amended
Note *4 amended
Note: 4. P52/SCK0/SCL0 and P97/SDA0 are NMOS push-pull
outputs in H8S/2138. ... P52/SCK0 and P97 (ICE = 0) high
levels are driven by NMOS in H8S/2138.
Table 25.27 amended
Notes 8 to 10 added
Notes: 8. Minimum number of times for which all
characteristics are guaranteed after rewriting (Guarantee
range is 1 to minimum value).
9. Reference value for 25C (as a guide line, rewriting should
normally function up to this value).
10. Data retention characteristics when rewriting is performed
within the specification range, including the minimum value.
Table 25.29 (1) amended
Note *5 added to test conditions for input pull-up MOS current
V
Table 25.40 (1) amended
Revision (See Manual for Details)
Item
Reprogramming count
Data retention time *
Item
Output high
voltage
Item
Three-state
leakage
current
(off state)
Input pull-up
MOS current
Item
Input
pull-up
MOS
current
in
= 0 V, V
All output pins
(except P97, and
P52 *
P97, P52 *
Ports 1 to 3
Port 6
Ports 1 to 6, 8, 9
Ports 1 to 3
Port 6
CC
10
4
) *
5
= 2.7 V *
4
5
to 3.6 V
Symbol Min
V
Symbol Min
–I
Symbol Min
–I
OH
P
I
TSI
P
Symbol Min
N
t
DRP
WEC
V
V
0.5
—
50
60
30
60
CC
CC
–0.5
–1.0
100 *
10
8
Typ
—
—
—
Typ
—
—
Typ Max
—
—
—
Typ
10000 *
—
—
—
—
Max
1.0
300
500
Max
300
600
9
Max
—
—
Unit
V
V
V
Unit
Times
Years
Unit
µA
µA
µA
Unit
µA
µA
Test
Conditions
I
I
I
V = 2.7 to
3.5 V
OH
OH
OH
CC
Test
Conditions
V
= 5 V 10%
Test
Conditions
V
V
V = 0 V, V
= 5 V 10%
= –200 µA
= –1 mA
= –200 µA,
in
CC
in
in
Test
Condition
= 0 V, V
= 0.5 to
–0.5 V
CC
CC