h8s-2138 Renesas Electronics Corporation., h8s-2138 Datasheet - Page 832

• Manufacturer Part Number: h8s-2138
• Description: Renesas 16-bit Single-chip Microcomputer H8s Family/h8s/2100 Series
• Manufacturer: Renesas Electronics Corporation.

Section 25 Electrical Characteristics
25.4.6
Table 25.38 shows the flash memory characteristics.
Table 25.38 Flash Memory Characteristics
Conditions (5-V version): V
Item
Programming time *
Erase time *
Reprogramming count
Programming Wait time after SWE-bit setting *
Erase
Notes: 1. Set the times according to the program/erase algorithms.
Rev. 4.00 Jun 06, 2006 page 778 of 1004
REJ09B0301-0400
2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash
Flash Memory Characteristics
1
*
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
(3-V version): V
3
*
Wait time after PSU-bit setting *
Wait time after P-bit setting *
Wait time after P-bit clear *
Wait time after PSU-bit clear *
Wait time after PV-bit setting *
Wait time after dummy write *
Wait time after PV-bit clear *
Maximum programming
count *
Wait time after SWE-bit setting *
Wait time after ESU-bit setting *
Wait time after E-bit setting *
Wait time after E-bit clear *
Wait time after ESU-bit clear *
Wait time after EV-bit setting *
Wait time after dummy write *
Wait time after EV-bit clear *
Maximum erase count *
6
1
*
2
1
*
*
4
4
*
5
T
a
CC
CC
= 0 to +85°C (wide-range specifications)
= 5.0 V ±10%, V
= 3.0 V to 3.6 V, V
1
*
6
*
1
1
7
1
1
1
1
*
1
*
1
1
1
1
1
4
6
1
1
1
1
Symbol Min
tP
tE
N
x
y
z
N
x
y
z
N
WEC
SS
= 0 V, T
SS
= 0 V, T
—
—
—
10
50
150
10
10
4
2
4
—
10
200
5
10
10
20
2
5
—
a
= 0 to +75°C (regular specifications),
Typ
10
100
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
a
= 0 to +75°C
Max
200
1200
100
—
—
200
—
—
—
—
—
1000
—
—
10
—
—
—
—
—
120
Unit
ms/32 bytes
ms/block
µs
µs
µs
µs
µs
µs
µs
µs
Times
µs
µs
ms
µs
µs
µs
µs
µs
Times
Times
Test
Condition
z = 200 µs
z = 10 ms