M58LT256JSB8ZA6 STMICROELECTRONICS [STMicroelectronics], M58LT256JSB8ZA6 Datasheet - Page 83

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M58LT256JSB8ZA6

Manufacturer Part Number
M58LT256JSB8ZA6
Description
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet

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M58LT256JST, M58LT256JSB
Table 42.
1. The variable P is a pointer which is defined at CFI offset 015h.
2. Bank regions. There are two bank regions, see Tables
Table 43.
(P+2C)h = 136h 00h
(P+2D)h = 137h 02h
(P+24)h = 12Eh 0Fh
(P+25)h = 12Fh 00h
(P+2A)h = 134h 0Fh
(P+2B)h = 135h 00h
(P+2E)h = 138h 64h
(P+2F)h = 139h 00h
(P+26)h = 130h
(P+27)h = 131h
(P+28)h = 132h
(P+29)h = 133h
(P+23)h = 12Dh
M58LT256JST
M58LT256JST
Offset
Offset
Bank and Erase block region information
Bank and Erase block region 1 information
Data
11h
00h
00h
01h
Data
02h
(P+24)h = 12Eh
(P+2A)h = 134h
(P+2B)h = 135h
(P+2C)h = 136h
(P+2D)h = 137h
(P+2E)h = 138h
(P+25)h = 12Fh
(P+26)h = 130h
(P+27)h = 131h
(P+28)h = 132h
(P+29)h = 133h
(P+2F)h = 139h
(P+23)h = 12Dh
M58LT256JSB
Offset
M58LT256JSB
Offset
Data
01h
00h
11h
00h
00h
02h
03h
00h
80h
00h
64h
00h
Data
02h
Number of identical banks within bank region 1
Number of program or erase operations allowed in
bank region 1:
Bits 0-3: number of simultaneous program
operations
Bits 4-7: number of simultaneous erase
operations
Number of program or erase operations allowed in
other banks while a bank in same region is
programming
Bits 0-3: number of simultaneous program
operations
Bits 4-7: number of simultaneous erase
operations
Number of program or erase operations allowed in
other banks while a bank in this region is erasing
Bits 0-3: number of simultaneous program
operations
Bits 4-7: number of simultaneous erase
operations
Types of erase block regions in bank region 1
n = number of erase block regions with contiguous
same-size erase blocks.
Symmetrically blocked banks have one blocking
region
Bank Region 1 Erase Block Type 1 Information
Bits 0-15: n+1 = number of identical-sized erase
blocks
Bits 16-31: n×256 = number of bytes in erase
block region
Bank region 1 (Erase Block Type 1)
Minimum block erase cycles × 1000
29
Number of bank regions within the device
to 34.
(2)
.
Description
Description
Common Flash Interface
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