HYB39S256160DC-6 INFINEON [Infineon Technologies AG], HYB39S256160DC-6 Datasheet - Page 19

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HYB39S256160DC-6

Manufacturer Part Number
HYB39S256160DC-6
Description
256 MBit Synchronous DRAM
Manufacturer
INFINEON [Infineon Technologies AG]
Datasheet
Parameter
Row Cycle Time during Auto
Refresh
Activate(a) to Activate(b)
Command period
CAS(a) to CAS(b) Command
period
Refresh Cycle
Refresh Period (8192 cycles)
Self Refresh Exit Time
Read Cycle
Data Out Hold Time
Data Out to Low Impedance Time
Data Out to High Impedance Time
DQM Data Out Disable Latency
Write Cycle
Last Data Input to Precharge
(Write without AutoPrecharge)
Last Data Input to Activate
(Write with AutoPrecharge)
DQM Write Mask Latency
INFINEON Technologies
Symbol
t
DAL,min
t
t
t
t
t
t
t
SREX
t
t
t
DQW
t
RFC
RRD
CCD
REF
DQZ
OH
WR
HZ
LZ
min.
2.5
60
12
12
PC166-
1
1
0
3
0
333
-6
max. min.
19
64
6
2
HYB39S256400/800/160DT(L)/DC(L)
63
14
14
PC133-
1
1
3
0
3
0
(twr/tck) + (trp/tck)
222
-7
Limit Values
256MBit Synchronous DRAM
max. min.
64
7
2
67
15
15
PC133-
1
1
3
0
3
0
-7.5
333
max. min.
64
7
2
70
16
15
PC100-
1
1
3
0
3
0
222
-8
max.
2002-04-23
64
8
2
Unit
ns
ns
CLK
ms
CLK
ns
ns
ns
CLK
ns
CLK
CLK
5
2,
6
7
8

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