VNN7NV04_10 STMICROELECTRONICS [STMicroelectronics], VNN7NV04_10 Datasheet - Page 7
VNN7NV04_10
Manufacturer Part Number
VNN7NV04_10
Description
OMNIFET II fully autoprotected Power MOSFET
Manufacturer
STMICROELECTRONICS [STMicroelectronics]
Datasheet
1.VNN7NV04_10.pdf
(37 pages)
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VNN7NV04, VNS7NV04, VND7NV04, VND7NV04-1
2
2.1
Electrical specifications
Figure 3.
Absolute maximum ratings
Table 2.
Symbol
R
V
V
E
E
V
IN MIN
T
P
V
ESD1
ESD2
I
MAX
MAX
T
I
I
T
IN
DS
stg
D
R
tot
IN
c
j
Drain-source voltage (V
Input voltage
Input current
Minimum input series impedance
Drain current
Reverse DC output current
Electrostatic discharge (R=1.5 KΩ,
C=100 pF)
Electrostatic discharge on output pin
only (R=330 Ω, C=150 pF)
Total dissipation at T
Maximum switching energy
(L=0.7 mH; R
T
Maximum switching energy
(L=0.6 mH; R
T
Operating junction temperature
Case operating temperature
Storage temperature
jstart
jstart
Current and voltage conventions
Absolute maximum ratings
V
IN
=150 ºC; I
=150 ºC; I
I
IN
L
L
Parameter
=0 Ω; V
=0 Ω; V
R
L
L
IN
=9 A)
=9 A)
c
=25 °C
Doc ID 7383 Rev 3
bat
bat
IN
=13.5 V;
=13.5 V;
=0 V)
INPUT
SOT-223
SOURCE
DRAIN
40
7
Internally clamped
Internally clamped
Internally limited
Internally limited
Internally limited
-55 to 150
I
D
16500
Value
SO-8
+/-20
-10.5
4000
150
4.6
37
Electrical specifications
DPAK/IPAK
V
DS
60
40
Unit
mA
mJ
mJ
°C
°C
°C
W
Ω
V
V
A
A
V
V
7/37
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