FDC634P_01 FAIRCHILD [Fairchild Semiconductor], FDC634P_01 Datasheet

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FDC634P_01

Manufacturer Part Number
FDC634P_01
Description
P-Channel 2.5V Specified PowerTrench MOSFET
Manufacturer
FAIRCHILD [Fairchild Semiconductor]
Datasheet
1.FDC634P_01.pdf (5 pages)
FDC634P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This
Fairchild’s low voltage PowerTrench process. It has
been optimized for battery power management
applications.
Applications
2001 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
Package Marking and Ordering Information
D
Battery management
Load switch
Battery protection
D
J
DSS
GSS
, T
JA
J C
Device Marking
STG
P-Channel
.634
SuperSOT -6
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
2.5V
D
D
specified
TM
S
– Continuous
– Pulsed
FDC634P
Device
Parameter
D
MOSFET
D
G
T
A
=25
uses
o
C unless otherwise noted
Reel Size
7’’
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1)
Features
–3.5 A, –20 V. R
Low gate charge (7.2 nC typical)
High performance trench technology for extremely
low R
DS(ON)
1
2
3
Tape width
–55 to +150
R
Ratings
8mm
DS(ON)
DS(ON)
–3.5
–20
–20
1.6
0.8
78
30
8
= 80 m @ V
= 110 m @ V
September 2001
6
5
4
GS
FDC634P Rev E (W)
3000 units
GS
Quantity
= –4.5 V
= –2.5 V
Units
C/W
C/W
W
V
V
A
C

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FDC634P_01 Summary of contents

Page 1

FDC634P P-Channel 2.5V Specified PowerTrench MOSFET General Description This P-Channel 2.5V specified Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. Applications Battery management Load switch Battery protection SuperSOT -6 ...

Page 2

Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS Breakdown Voltage Temperature BV DSS Coefficient Zero Gate Voltage Drain Current DSS I Gate–Body Leakage, Forward GSSF I Gate–Body Leakage, Reverse GSSR On Characteristics (Note 2) ...

Page 3

Typical Characteristics -4.5V -3.0V GS -2.5V -3. -2. DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -3. ...

Page 4

Typical Characteristics -3. GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics. 100 R LIMIT 10 DS(ON) 10ms 100ms 1 1s ...

Page 5

TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FAST Bottomless™ FASTr™ FRFET™ CoolFET™ GlobalOptoisolator™ CROSSVOLT™ GTO™ DenseTrench™ DOME™ ...

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